APT200GT60JRDL Datasheet, PDF (4/9 Pages) Microsemi Corporation – Resonant Mode Combi IGBT

100
80
V_GE = 15V
60
40
20
V_CE = 400V
T_J = 25°C, or 125°C
R_G = 2.2Ω
L = 100μH
0
0 50 100 150 200 250 300 350 400
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
400 _{RG = 2.2Ω, L = 100μH, VCE = 400V}
300
200
100
T_J = 25 or 125°C,V_GE = 15V
0
0 50 100 150 200 250 300 350 400
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
40000
35000
V_CE = 400V
V_GE = +15V
R_G = 2.2Ω
30000
25000
20000
T_J = 125°C
15000
10000
5000
T_J = 25°C
0
0 50 100 150 200 250 300 350 400
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
100000
80000
V_CE = 400V
V_GE = +15V
T_J = 125°C
E_off,400A
60000
E_on2,400A
40000
E_off,200A
20000
E_on2,200A
E_off,100A
E_on2,100A
0
0
5
10
15
20
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
APT200GT60JRDL
1400
1200
1000
800
600
V_GE =15V,T_J=125°C
V_GE =15V,T_J=25°C
400
200
V_CE = 400V
R_G = 2.2Ω
L = 100μH
0
0 50 100 150 200 250 300 350 400
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
450
R_G = 2.2Ω, L = 100μH, V_CE = 400V
400
350
T_J = 25°C, V_GE = 15V
300
250
200
150
T_J = 125°C, V_GE = 15V
100
50
0
0 50 100 150 200 250 300 350 400
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
50000
40000
V_CE = 400V
V_GE = +15V
R_G = 2.2Ω
T_J = 125°C
30000
20000
10000
T_J = 25°C
0
50 100 150 200 250 300 350 400
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
60000
50000
V_CE = 400V
V_GE = +15V
R_G = 2.2Ω
E_on2,400A
40000
30000
E_off,400A
20000
E_off,200A
10000
E_on2,200A
E_on2,100A
E_off,100A
0
0
25
50
75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature