APT200GT60JRDL Datasheet, PDF (5/9 Pages) Microsemi Corporation – Resonant Mode Combi IGBT

TYPICAL PERFORMANCE CURVES
100,000
10,000
C_ies
1,000
C_oes
C_res
100
0
100 200 300 400 500
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
APT200GT60JRDL
1000
100
10
1
0.1
1
10
100
1000
V_CE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.25
0.20
D = 0.9
0.7
0.15
0.5
0.10
0.3
Note:
t1
0.05
0
10^-5
0.1
0.05
10^-4
SINGLE PULSE
10^-3
10^-2
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10 ^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
40
75°C
T_J = 125°C
T_C = 75°C
D = 50 %
30
V_CE = 400V
R_G = 1.0Ω
20
F_max = min (f_max, f _max2)
0.05
10
100°C
f_max1 = _{t d(on) + tr + td(off) + tf}
0
f_max2 =
P_diss - P _cond
E _on2 + E _off
P_diss =
T_J - T _C
R _θJC
−10
10 20 30 40 50 60 70 80 90 100
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current