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| APT5014BLLG Datasheet, PDF (6/44 Pages) Microsemi Corporation – Power Semiconductors Power Modules RF Power MOSFETs | |||
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Insulated Gate Bipolar Transistors (IGBTs)
FAST
s .04 4ECHNOLOGY
s 3HORT #IRCUIT 2ATED
s ,OW TO -ODERATE &REQ
s ,OW #ONDUCTION ,OSS
s %ASY 0ARALLELING
BVCES
Volts
VCE(ON)
Typ 25OC
IC2
100oC
Combi (IGBT & "DQ" FRED)
2.5
35
1200
2.5
64
2.5
80
Combi (IGBT & "DL" FRED)
2.8
50
2.8
30
600
2.2
50
2.2
45
2.2
25
1200
3.2
50
3.2
100
Maximum IC
at Frequency
15 kHz
16
33
42
50 kHz
23
14
41
28
17
20 kHz
28
40
30 kHz
10
17
20
80 kHz
16
9
31
22
14
40 kHz
17
21
Part Number
APT33GF120B2RDQ2G
APT50GF120JRDQ3
APT60GF120JRDQ3
APT50GS60BRDLG
APT30GS60BRDLG
APT50GP60LDL
APT30GP60B2DL
APT15GP60BDL
APT50GT120B2RDL
APT100GT120JRDL
Package
Style
T-MAX®
ISOTOP®
ISOTOP®
TO-247
TO-247
TO-264
T-MAX® or TO-264
TO-247
T-MAX®
ISOTOP®
Power MOS 8TM MOSFETs / FREDFETs
(fast body diode)
TM
Power MOS 8⢠is Microsemi's latest family of high speed, high voltage (500-1200V)
N-channel switch-mode power transistors with lower EMI characteristics and lower cost
compared to previous generation devices. These new MOSFETs / FREDFETs have been
optimized for both hard and soft switching in high frequency, high voltage applications rated
above 500W. There are 2 product types in the Power MOS 8⢠MOSFET family:
1) MOSFET
2) FREDFETs have a fast recovery body diode characteristic, providing high commutation dv/dt
ruggedness and high reliability in ZVS circuits.
Features
Applications
s &AST SWITCHING
s ,OW %-)
s 1UIET SWITCHING
s 0OWER FACTOR CORRECTION
s 3ERVER AND TELECOM POWER SYSTEMS
s 3OLAR INVERTERS
s 3EMICONDUCTOR CAPITAL EQUIPMENT
s )NDUCTION HEATING
s !VALANCHE ENERGY RATED
s ,OW GATE CHARGE
s ,OWER COST
s !RC WELDING
s 0LASMA CUTTING
s "ATTERY CHARGERS
s -EDICAL
Quiet Switching
The new Power MOS 8⢠series is a result of extensive research into quiet switching. Input and reverse transfer capaci-
tance values as well as their ratio were set at speciï¬c values to achieve quiet switching with minimal switching loss. The
Power MOS 8⢠series of devices are inherently quiet switching, stable when connected in parallel, very efï¬cient, and
lower cost than previous generations.
Body Diode Options
As with previous generation products, Power MOS 8⢠MOSFETs and FREDFETs are available in all voltage ratings. A
FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due
to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not
needed, MOSFET versions are available.
6
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