APT5014BLLG Datasheet, PDF (14/44 Pages) Microsemi Corporation – Power Semiconductors Power Modules RF Power MOSFETs

High Voltage RF MOSFETs
The ARF family of RF Power MOSFETs are optimized for applications requiring frequencies as high as 150MHz and operating voltages as
high as 400V. Historically, RF Power MOSFETs were limited to applications of 50V or less. This limitation has been removed by combining
Microsemi's high voltage MOSFET technology with RF specific die geometries.
Why Higher Voltage? Higher V_DD means higher load impedance. For 150W output from a 50V supply the load impedance is only 8 ohms.
At 125V, the load impedance is 50 ohms. The higher impedance allows simpler transformers and combiners. Paralleled devices can still
operate into reasonable and convenient impedances. The increased operating voltage also lowers the DC current required for any given
power output increasing efficiency and reducing the size, weight and cost of other system components.
Pout
Freq.
V_DD/BV_DSS
eJC
(W) (MHz)
(V)
(^OC/W)
Package
Style
Part
Number
Class of
Operation
90
120
150V/450V 0.76
100
100
125V/500V 0.70
100
125V/500V 0.70
65
250V/900V 0.55
140
65
250V/900V 0.55
65
150V/450V 0.55
65
125V/500V 0.50
150
65
250V/1kV 0.50
60 300V/1.2kV 0.50
150
150
165V/500V 0.60
150
165V/500V 0.35
300
150
165V/500V 0.31
150
165V/500V 0.31
45
200V/1kV 0.35
300
45
200V/1kV 0.13
400
65
165V/500V 0.18
750
25 250V/1000V 0.13
40
125V/500V 0.12
750
40
250V/1kV 0.12
40 300V/1.2kV 0.12
750
40 400V/1000V 0.12
40
380V/500V 0.12
TO-247
ARF449AG/BG
C-E
TO-247
ARF463AG/BG
A-E
TO-247 ARF463AP1G/BP1G
A-E
TO-247
ARF446G
C-E
TO-247
ARF447G
C-E
TO-247
ARF448AG/BG
C-E
TO-247
ARF460AG/BG
A-E
TO-247
ARF461AG/BG
A-E
TO-247
ARF465AG/BG
A-E
M174
ARF521
A-E
M208
ARF473
A-E
T3A
ARF475FL
A-E
T3C
ARF476FL
A-E
TO-264
ARF466AG/BG
A-E
T3
ARF466FL
A-E
T3C
ARF477FL
A-E
T2
ARF1519
A-E
T1
ARF1500
A-E
T1
ARF1501
A-E
T1
ARF1505
A-E
T1
ARF1510
D
T1
ARF1511
D
M113 / M174 / M177
M208
S
D
S
TO-247
T2
TO-264

$RAIN
3OURCE


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'ATE

T2 Backside
S
G
S
T1
T2B
T3
T3A
T3B
Drivers and Driver-RF MOSFET Hybrids
T3C
T4
T11
The DRF1200/01/02/03 Hybrids integrates Driver, bypass capacitors and RF MOSFETS into a single package. Integration
maximizes amplifier performance by minimizing transmission line parasitics between the Driver and MOSFET. The DRF1300 or DRF1301
has two independent channels, each containing a Driver and RF MOSFET in a push pull configuration. The DRF1400A and B are half
bridge hybrids with symmetrically orientated leads so that the two can easily be configured into a full bridge converter. All DRF parts
feature a proprietary Anti-ring function to eliminate cross conduction in a Bridge or push-pull topologies. All DRF parts can be externally
selected in either an inverting or non-inverting configuration.
P_D
Freq.
(W) (MHz)
V_DD/BV_DSS
(V)
600
30
1060
30
1060
30
600
30
1000
30
1000
30
1500
30
15V/1000V
15V/1000V
15V/500V
15V/1000V
15V/500V
15V/1000
15V/500
eJC
(^OC/W)
1.00
.025
.025
0.09
0.06
0.06
0.06
Package
Style
T2B
T2B
T2B
T2B
T4
T4
T4
Part
Number
DRF1200
DRF1201
DRF1202
DRF1203
DRF1300
DRF1301
DRF1400
Class of
Operation
D-E
D-E
D-E
D-E
D-E
D-E
D-E
Description
Driver and High Voltage RF MOSFET
Driver and High Voltage/High Power RF MOSFET
Driver and High Power RF MOSFET
Driver and High Voltage RF MOSFET
2 Drivers/RF MOSFETs in Push-Pull Configuration
2 Drivers/RF MOSFETs in Push-Pull Configuration
2 Drivers/RF MOSFETs in a H Bridge Configuration
Datasheets available on www.microsemi.com
14
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