APT50GF60JCU2 Datasheet, PDF (5/6 Pages) Microsemi Corporation – ISOTOP® Boost chopper NPT IGBT SiC chopper diode

Turn-On Delay Time vs Collector Current
60
50
V_GE = 15V
40
Tj = 125°C
V_CE = 400V
30
R_G = 2.7Ω
20
0
25 50 75 100 125 150
I_CE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
60
V_CE = 400V
50
R_G = 2.7Ω
40
30
V_GE=15V,
T_J=125°C
20
10
0
0
25 50 75 100 125 150
I_CE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
1.5
1.25
V_CE = 400V
R_G = 2.7Ω
T_J=125°C,
1
V_GE=15V
0.75
0.5
0.25
0
0 25 50 75 100 125 150
I_CE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
1.5
1.25
1
V_CE = 400V
V_GE = 15V
T_J= 125°C
Eoff, 50A
Eon, 50A
0.75
0.5
0.25
0
0
5
10
15
20
25
Gate Resistance (Ohms)
APT50GF60JCU2
Turn-Off Delay Time vs Collector Current
175
150
V_GE=15V,
125
T_J=125°C
100
75
50
0
V_CE = 400V
R_G = 2.7Ω
25 50
V_GE=15V,
T_J=25°C
75 100 125 150
I_CE, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
60
V_CE = 400V, V_GE = 15V, R_G = 2.7Ω
50
40
30
T_J = 125°C
20
T_J = 25°C
10
0
0 25 50 75 100 125 150
I_CE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
2.5
V_CE = 400V
2
V_GE = 15V
R_G = 2.7Ω
T_J = 125°C
1.5
1
0.5
0
0 25 50 75 100 125 150
I_CE, Collector to Emitter Current (A)
Reverse Bias Safe Operating Area
120
100
80
60
40
20
0
0
200
400
600
V_CE, Collector to Emitter Voltage (V)
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