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APT50GF60JCU2 Datasheet, PDF (2/6 Pages) Microsemi Corporation – ISOTOP® Boost chopper NPT IGBT SiC chopper diode
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APT50GF60JCU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 600V
Tj = 25°C
Tj = 125°C
VGE =15V
IC = 50A
Tj = 25°C 1.7
Tj = 125°C
VGE = VCE , IC = 1mA
4
VGE = 20V, VCE = 0V
250 µA
500
2.0 2.45 V
2.2
6V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf
Td(on)
Tr
Fall Time
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Isc Short Circuit data
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
2200
323
pF
200
VGE = 15V
VBus = 300V
IC = 50A
166
20
nC
100
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
40
9
ns
120
12
Inductive Switching (125°C)
42
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
10
ns
130
21
VGE = 15V
VBus = 400V
Tj = 125°C
0.3
IC = 50A
RG = 2.7Ω
Tj = 125°C
1
mJ
VGE ≤15V ; VBus = 360V
tp ≤ 10µs ; Tj = 125°C
225
A
Chopper SiC diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage
600
V
IRM Maximum Reverse Leakage Current
VR=600V
Tj = 25°C
Tj = 175°C
100 400
µA
200 2000
IF DC Forward Current
Tc = 125°C
20
A
VF Diode Forward Voltage
IF = 20A
Tj = 25°C
Tj = 175°C
1.6 1.8 V
2 2.4
QC Total Capacitive Charge
IF = 20A, VR = 300V
di/dt =800A/µs
28
nC
C Total Capacitance
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
130
pF
100
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