APT50GF60JCU2 Datasheet, PDF (4/6 Pages) Microsemi Corporation – ISOTOP® Boost chopper NPT IGBT SiC chopper diode

Output characteristics (V_GE=15V)
100
250µs Pulse Test
< 0.5% Duty cycle
75
T_J=25°C
50
T_J=125°C
25
0
0
1
2
3
4
V_CE, Collector to Emitter Voltage (V)
Transfer Characteristics
150
250µs Pulse Test
125 < 0.5% Duty cycle
100
75
50
25
0
0
T_J=125°C
T_J=25°C
1 2 3 4 5 6 7 8 9 10
V_GE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
1.20
1.10
1.00
0.90
0.80
25
50
75
100
125
T_J, Junction Temperature (°C)
APT50GF60JCU2
Output Characteristics (V_GE=10V)
100
250µs Pulse Test
< 0.5% Duty cycle
75
T_J=25°C
50
T_J=125°C
25
0
0
1
2
3
4
V_CE, Collector to Emitter Voltage (V)
Gate Charge
18
16
I_C = 50A
V_CE=120V
14
T_J = 25°C
V_CE=300V
12
10
V_CE=480V
8
6
4
2
0
0 25 50 75 100 125 150 175 200
Gate Charge (nC)
DC Collector Current vs Case Temperature
70
60
50
40
30
20
10
0
25
50
75
100 125 150
T_C, Case Temperature (°C)
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