APT50GF60JCU2 Datasheet, PDF (3/6 Pages) Microsemi Corporation – ISOTOP® Boost chopper NPT IGBT SiC chopper diode

APT50GF60JCU2
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
R_thJC Junction to Case Thermal Resistance
IGBT
SiC chopper Diode
0.45
1.35 ^°C/W
R_thJA
V_ISOL
T_J,T_STG
T_L
Torque
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
2500
-55
20
V
150
300
°C
1.5 N.m
Wt Package Weight
29.2
g
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
3.3 (.129)
3.6 (.143)
Cathode
1.95 (.077)
2.14 (.084)
Collector
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
Emitter
Dimensions in Millimeters and (Inches)
Typical IGBT Performance Curve
Gate
Capacitance vs Collector to Emitter Voltage
10000
Cies
1000
Operating Frequency vs Collector Current
240
200
V_CE = 400V
D = 50%
160
R_G = 2.7Ω
ZCS _{TJ = 125°C}
T_C= 75°C
120
Coes
100
0
Cres
10
20
30
40
50
V_CE, Collector to Emitter Voltage (V)
80
hard
ZVS
40 ^switching
0
0 20 40 60 80 100 120
I_C, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
www.microsemi.com
3-6