JAN2N6782 Datasheet, PDF (4/9 Pages) Microsemi Corporation – This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to the JANTXV level for high-reliability applications.

2N6782, 2N6784 and 2N6786
ELECTRICAL CHARACTERISTICS @ T_A = +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
V_GS = 10 V, I_D = 3.50 A, V_DS = 50 V
V_GS = 10 V, I_D = 2.25 A, V_DS = 100 V
V_GS = 10 V, I_D = 1.25 A, V_DS = 200 V
Gate to Source Charge
V_GS = 10 V, I_D = 3.50 A, V_DS = 50 V
V_GS = 10 V, I_D = 2.25 A, V_DS = 100 V
V_GS = 10 V, I_D = 1.25 A, V_DS = 200 V
Gate to Drain Charge
V_GS = 10 V, I_D = 3.50 A, V_DS = 50 V
V_GS = 10 V, I_D = 2.25 A, V_DS = 100 V
V_GS = 10 V, I_D = 1.25 A, V_DS = 200 V
Symbol Min. Max. Unit
2N6782
2N6784
2N6786
Q _g(on)
2N6782
2N6784 Q_gs
2N6786
2N6782
2N6784 Q_gd
2N6786
8.1
8.6
nC
12
1.7
1.5
nC
1.8
4.5
5.5
nC
7.6
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-on delay time
I_D = 3.50 A, V_GS = 10 V, R_G = 7.5 Ω, V_DD = 50 V
I_D = 2.25 A, V_GS = 10 V, R_G = 7.5 Ω, V_DD = 100 V
I_D = 1.25 A, V_GS = 10 V, R_G = 7.5 Ω, V_DD = 200 V
Rinse time
I_D = 3.50 A, V_GS = 10 V, R_G = 7.5 Ω, V_DD = 50 V
I_D = 2.25 A, V_GS = 10 V, R_G = 7.5 Ω, V_DD = 100 V
I_D = 1.25 A, V_GS = 10 V, R_G = 7.5 Ω, V_DD = 200 V
Turn-off delay time
I_D = 3.50 A, V_GS = 10 V, R_G = 7.5 Ω, V_DD = 50 V
I_D = 2.25 A, V_GS = 10 V, R_G = 7.5 Ω, V_DD = 100 V
I_D = 1.25 A, V_GS = 10 V, R_G = 7.5 Ω, V_DD = 200 V
Fall time
I_D = 3.50 A, V_GS = 10 V, R_G = 7.5 Ω, V_DD = 50 V
I_D = 2.25 A, V_GS = 10 V, R_G = 7.5 Ω, V_DD = 100 V
I_D = 1.25 A, V_GS = 10 V, R_G = 7.5 Ω, V_DD = 200 V
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, V_DD ≤ 50 V, I_F = 3.50 A
di/dt ≤ 100 A/µs, V_DD ≤ 50 V, I_F = 2.25 A
di/dt ≤ 100 A/µs, V_DD ≤ 50 V, I_F = 1.25 A
Symbol
2N6782
2N6784
2N6786
t _d(on)
2N6782
2N6784
t_r
2N6786
2N6782
2N6784
2N6786
t _d(off)
2N6782
2N6784
t_f
2N6786
2N6782
2N6784
t _rr
2N6786
Min.
Max. Unit
15
ns
25
20
ns
20
25
30
ns
35
20
20
ns
30
180
350
ns
540
T4-LDS-0064, Rev. 3 (121467)
©2012 Microsemi Corporation
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