JAN2N6782 Datasheet, PDF (3/9 Pages) Microsemi Corporation – This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to the JANTXV level for high-reliability applications.

2N6782, 2N6784 and 2N6786
ELECTRICAL CHARACTERISTICS @ T_A = +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V_GS = 0 V, I_D = 1.0 mA
Gate-Source Voltage (Threshold)
V_DS ≥ V_GS, I_D = 0.25 mA
V_DS ≥ V_GS, I_D = 0.25 mA, T_J = +125 °C
V_DS ≥ V_GS, I_D = 0.25 mA, T_J = -55 °C
Gate Current
V_GS = ± 20 V, V_DS = 0 V
V_GS = ± 20 V, V_DS = 0 V, T_J = +125 °C
Drain Current
V_GS = 0 V, V_DS = 80 V
V_GS = 0 V, V_DS = 160 V
V_GS = 0 V, V_DS = 320 V
Drain Current
V_GS = 0 V, V_DS = 80 V, T_J = +125 °C
V_GS = 0 V, V_DS = 160 V, T_J = +125 °C
V_GS = 0 V, V_DS = 320 V, T_J = +125 °C
Static Drain-Source On-State Resistance
V_GS = 10 V, I_D = 2.25 A pulsed
V_GS = 10 V, I_D = 1.50 A pulsed
V_GS = 10 V, I_D = 0.80 A pulsed
Static Drain-Source On-State Resistance
V_GS = 10 V, I_D = 3.50 A pulsed
V_GS = 10 V, I_D = 2.25 A pulsed
V_GS = 10 V, I_D = 1.25 A pulsed
Static Drain-Source On-State Resistance
T_J = +125 °C
V_GS = 10 V, I_D = 2.25 A pulsed
V_GS = 10 V, I_D = 1.50 A pulsed
V_GS = 10 V, I_D = 0.80 A pulsed
Diode Forward Voltage
V_GS = 0 V, I_D = 3.50 A pulsed
V_GS = 0 V, I_D = 2.25 A pulsed
V_GS = 0 V, I_D = 1.25 A pulsed
Symbol Min. Max.
2N6782
100
2N6784 V_(BR)DSS 200
2N6786
400
V _GS(th)1
2.0
4.0
V _GS(th)2
1.0
V _GS(th)3
5.0
I _GSS1
I _GSS2
±100
±200
2N6782
2N6784
I _DSS1
25
2N6786
2N6782
2N6784
2N6786
I _DSS2
0.25
2N6782
2N6784
2N6786
r _DS(on)1
0.60
1.50
3.60
2N6782
2N6784
2N6786
r _DS(on)2
0.61
1.60
3.70
2N6782
2N6784
2N6786
r _DS(on)3
2N6782
2N6784
V _SD
2N6786
1.08
2.81
7.92
1.5
1.5
1.4
Unit
V
V
nA
µA
mA
Ω
Ω
Ω
V
T4-LDS-0064, Rev. 3 (121467)
©2012 Microsemi Corporation
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