JAN2N6766 Datasheet, PDF (4/9 Pages) Microsemi Corporation – N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543

2N6764, 2N6766, 2N6768 and 2N6770
ELECTRICAL CHARACTERISTICS @ T_A = +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
V_GS = 10 V, I_D = 38.0 A, V_DS = 50 V
V_GS = 10 V, I_D = 30.0 A, V_DS = 100 V
V_GS = 10 V, I_D = 14.0 A, V_DS = 200 V
V_GS = 10 V, I_D = 12.0 A, V_DS = 250 V
Gate to Source Charge
V_GS = 10 V, I_D = 38.0 A, V_DS = 50 V
V_GS = 10 V, I_D = 30.0 A, V_DS = 100 V
V_GS = 10 V, I_D = 14.0 A, V_DS = 200 V
V_GS = 10 V, I_D = 12.0 A, V_DS = 250 V
Gate to Drain Charge
V_GS = 10 V, I_D = 38.0 A, V_DS = 50 V
V_GS = 10 V, I_D = 30.0 A, V_DS = 100 V
V_GS = 10 V, I_D = 14.0 A, V_DS = 200 V
V_GS = 10 V, I_D = 12.0 A, V_DS = 250 V
Symbol Min. Max. Unit
2N6764
2N6766
2N6768
2N6770
Q _g(on)
2N6764
2N6766
2N6768
Q _gs
2N6770
2N6764
2N6766
2N6768
Q _gd
2N6770
125
115
110
nC
120
22
22
18
nC
19
65
60
65
nC
70
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-on delay time
I_D = 38.0 A, V_GS = 10 V, R_G = 2.35 Ω, V_DD = 50 V
I_D = 30.0 A, V_GS = 10 V, R_G = 2.35 Ω, V_DD = 100 V
I_D = 14.0 A, V_GS = 10 V, R_G = 2.35 Ω, V_DD = 200 V
I_D = 12.0 A, V_GS = 10 V, R_G = 2.35 Ω, V_DD = 250 V
Rise time
I_D = 38.0 A, V_GS = 10 V, R_G = 2.35 Ω, V_DD = 50 V
I_D = 30.0 A, V_GS = 10 V, R_G = 2.35 Ω, V_DD = 100 V
I_D = 14.0 A, V_GS = 10 V, R_G = 2.35 Ω, V_DD = 200 V
I_D = 12.0 A, V_GS = 10 V, R_G = 2.35 Ω, V_DD = 250 V
Turn-off delay time
I_D = 38.0 A, V_GS = 10 V, R_G = 2.35 Ω, V_DD = 50 V
I_D = 30.0 A, V_GS = 10 V, R_G = 2.35 Ω, V_DD = 100 V
I_D = 14.0 A, V_GS = 10 V, R_G = 2.35 Ω, V_DD = 200 V
I_D = 12.0 A, V_GS = 10 V, R_G = 2.35 Ω, V_DD = 250 V
Fall time
I_D = 38.0 A, V_GS = 10 V, R_G = 2.35 Ω, V_DD = 50 V
I_D = 30.0 A, V_GS = 10 V, R_G = 2.35 Ω, V_DD = 100 V
I_D = 14.0 A, V_GS = 10 V, R_G = 2.35 Ω, V_DD = 200 V
I_D = 12.0 A, V_GS = 10 V, R_G = 2.35 Ω, V_DD = 250 V
Diode Reverse Recovery Time
di/dt = 100 A/µs, V_DD ≤ 30 V, I_D = 38.0 A
di/dt = 100 A/µs, V_DD ≤ 30 V, I_D = 30.0 A
di/dt = 100 A/µs, V_DD ≤ 30 V, I_D = 14.0 A
di/dt = 100 A/µs, V_DD ≤ 30 V, I_D = 12.0 A
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
Symbol
t _d(on)
t_r
t _d(off)
t_f
t _rr
Min.
Max. Unit
35
ns
190
ns
170
ns
130
ns
500
950
1200
ns
1600
T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
Page 4 of 9