JAN2N6766 Datasheet, PDF (2/9 Pages) Microsemi Corporation – N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543

2N6764, 2N6766, 2N6768 and 2N6770
NOT ES:
1. Derate linearly by 1.2 W/ºC for T _C > +25 ºC.
2. The following formula derives the maximum theoretical I_D limit. I_D is limited by package and internal wires and may also be limited by
pin diameter:
3. I_DM = 4 x I_D1 as calculated in note 2.
MECHANICAL and PACKAGING
• CASE: TO-3 metal can.
• TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available on
commercial grade only.
• MARKING: Manufacturer's ID, part number, date code.
• WEIGHT: Approximately 12.7 grams.
• See Package Dimensions on last page.
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
PART NOMENCLATURE
JAN 2N6764 (e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Symbol
di/dt
I_F
R_G
V _DD
V _DS
V _GS
SYMBOLS & DEFINITIONS
Definition
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
Forward current
Gate drive impedance
Drain supply voltage
Drain source voltage, dc
Gate source voltage, dc
T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
Page 2 of 9