JAN2N6766 Datasheet, PDF (3/9 Pages) Microsemi Corporation – N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543

2N6764, 2N6766, 2N6768 and 2N6770
ELECTRICAL CHARACTERISTICS @ T_A = +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V_GS = 0 V, I_D = 1.0 mA
Gate-Source Voltage (Threshold)
V_DS ≥ V_GS, I_D = 0.25 mA
V_DS ≥ V_GS, I_D = 0.25 mA, T_J = +125 °C
V_DS ≥ V_GS, I_D = 0.25 mA, T_J = -55 °C
Gate Current
V_GS = ± 20 V, V_DS = 0 V
V_GS = ± 20 V, V_DS = 0 V, T_J = +125 °C
Drain Current
V_GS = 0 V, V_DS = 80 V
V_GS = 0 V, V_DS = 160 V
V_GS = 0 V, V_DS = 320 V
V_GS = 0 V, V_DS = 400 V
Drain Current
V_GS = 0 V, V_DS = 100 V, T_J = +125 °C
V_GS = 0 V, V_DS = 200 V, T_J = +125 °C
V_GS = 0 V, V_DS = 400 V, T_J = +125 °C
V_GS = 0 V, V_DS = 500 V, T_J = +125 °C
Drain Current
V_GS = 0 V, V_DS = 80 V, T_J = +125 °C
V_GS = 0 V, V_DS = 160 V, T_J = +125 °C
V_GS = 0 V, V_DS = 320 V, T_J = +125 °C
V_GS = 0 V, V_DS = 400 V, T_J = +125 °C
Static Drain-Source On-State Resistance
V_GS = 10 V, I_D = 24.0 A pulsed
V_GS = 10 V, I_D = 19.0 A pulsed
V_GS = 10 V, I_D = 9.0 A pulsed
V_GS = 10 V, I_D = 7.75 A pulsed
Static Drain-Source On-State Resistance
V_GS = 10 V, I_D = 38.0 A pulsed
V_GS = 10 V, I_D = 30.0 A pulsed
V_GS = 10 V, I_D = 14.0 A pulsed
V_GS = 10 V, I_D = 12.0 A pulsed
Static Drain-Source On-State Resistance
T_J = +125 °C
V_GS = 10 V, I_D = 24.0 A pulsed
V_GS = 10 V, I_D = 19.0 A pulsed
V_GS = 10 V, I_D = 9.0 A pulsed
V_GS = 10 V, I_D = 7.75 A pulsed
Diode Forward Voltage
V_GS = 0 V, I_D = 38.0 A pulsed
V_GS = 0 V, I_D = 30.0 A pulsed
V_GS = 0 V, I_D = 14.0 A pulsed
V_GS = 0 V, I_D = 12.0 A pulsed
Symbol Min. Max.
2N6764
100
2N6766
2N6768
V _(BR)DSS
200
400
2N6770
500
V _GS(th)1
2.0
4.0
V _GS(th)2
1.0
V _GS(th)3
5.0
I _GSS1
I _GSS2
±100
±200
2N6764
2N6766
2N6768
I _DSS1
25
2N6770
2N6764
2N6766
2N6768
I _DSS2
1.0
2N6770
2N6764
2N6766
2N6768
2N6770
I _DSS3
0.25
2N6764
2N6766
2N6768
2N6770
r _DS(on)1
0.055
0.085
0.3
0.4
2N6764
2N6766
2N6768
2N6770
r _DS(on)2
0.065
0.09
0.4
0.5
2N6764
2N6766
2N6768
2N6770
r _DS(on)3
2N6764
2N6766
2N6768
V _SD
2N6770
0.094
0.153
0.66
0.88
1.9
1.9
1.7
1.7
Unit
V
V
nA
µA
mA
mA
Ω
Ω
Ω
V
T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
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