APT38N60BC6 Datasheet, PDF (4/5 Pages) Microsemi Corporation – C Super Junction MOSFET

Typical Performance Curves
100,000
10,000
1000
100
10
C_iss
C_oss
C_rss
1
0
100 200 300 400 500
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Capacitance vs Drain-To-Source Voltage
200
100
T_J= +150°C
T_J = =25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 12, Source-Drain Diode Forward Voltage
00
V_DD = 400V
R_G = 4.3Ω
80
T_J = 125°C
L = 100μH
t_f
60
40
t_r
20
0
10
20
30
40
50
60
I_D (A)
FIGURE 14 , Rise and Fall Times vs Current
2500
V_DD = 400V
I_D = 38A
E
off
2000 ^{TJ = 125°C}
L = 100μH
E_ON includes
diode reverse recovery.
1500
1000
E
on
500
0
0 10 20 30 40 50 60
R_G, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
14
I_D = 38A
12
APT38N60B_SC6
10
V_DS= 120V
8
V_DS= 300V
6
V_DS= 480V
4
2
0
0 20 40 60 80 100 120 140
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 11, Gate Charges vs Gate-To-Source Voltage
180
160
140
t
d(off)
120
100
80
V_DD = 400V
R_G = 4.3 Ω
T_J = 125°C
L = 100μH
60
40
20
t_d(on)
0
10
20
30
40
50 60
2000
1600
1200
I_D (A)
FIGURE 13, Delay Times vs Current
V_DD = 400V
R_G = 4.3Ω
T_J = 125°C
E_off
L = 100μH
E_ON includes
diode reverse recovery.
E_on
800
400
0
0
10 20 30 40 50 60
I_D (A)
FIGURE 15, Switching Energy vs Current