APT38N60BC6 Datasheet, PDF (2/5 Pages) Microsemi Corporation – C Super Junction MOSFET

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
C_iss Input Capacitance
C_oss Output Capacitance
C_{rss Reverse Transfer Capacitance}
Q_{g Total Gate Charge} ⁴
Q_{gs Gate-Source Charge}
Q_{gd Gate-Drain ("Miller ") Charge}
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 300V
I_D = 38A @ 25°C
t_d(on) Turn-on Delay Time
t_r
Rise Time
t_{d(off) Turn-off Delay Time}
t_f
Fall Time
E_{on Turn-on Switching Energy} ⁵
E_{off Turn-off Switching Energy}
E_on Turn-on Switching Energy ⁵
E_{off Turn-off Switching Energy}
INDUCTIVE SWITCHING
V_GS = 15V
V_DD = 400V
I_D = 38A @ 25°C
R_G = 4.3Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 400V, V_GS = 15V
I_D = 38A, R_G = 4.3Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 400V, V_GS = 15V
I_D = 38A, R_G = 4.3Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
I_S
Continuous Source Current (Body Diode)
I_SM Pulsed Source Current ¹ (Body Diode)
V_SD Diode Forward Voltage ³ (V_GS = 0V, I_S = -38A)
/dv
dt
Peak
Diode
Recovery
/dv
dt
6
t _rr
Reverse Recovery Time
(I_S
=
-38A,
/di
dt
=
100A/μs)
Q _rr
Reverse Recovery Charge
(I_S
=
-38A,
/di
dt
=
100A/μs)
I_RRM
Peak Recovery Current
(I_S
=
-38A,
/di
dt
=
100A/μs)
T_{j = 25°C}
T_{j = 25°C}
T_{j = 25°C}
MIN
MIN
APT38N60B_SC6
TYP MAX UNIT
2826
2428
pF
261
112
18
nC
58
14
29
ns
118
69
710
550
1100
μJ
625
TYP MAX UNIT
33
Amps
112
1.3 Volts
8
V/ns
667
ns
18
μC
49
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN TYP MAX
R_θJC
Junction to Case
0.45
R_θJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction temperature
4 See MIL-STD-750 Method 3471
2 Repetitive avalanche causes additional power losses that can be calculated as _{5 Eon includes diode reverse recovery.}
PAV = EAR*f . Pulse width tp limited by Tj max.
6 Maximum 125°C diode commutation speed = di/dt 600A/μs
3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.5
D = 0.9
0.4
0.7
0.3
0.5
0.2
0.3
Note:
t1
0.1
0.1
0.05
0
10^-5
10^-4
SINGLE PULSE
10^-3
10^-2
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
UNIT
°C/W