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APT38N60BC6 Datasheet, PDF (3/5 Pages) Microsemi Corporation – C Super Junction MOSFET
Typical Performance Curves
100
10 &15V
80
7V
60
6.5V
40
6V
5.5V
20
5V
4.5V
0
0
5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics
3.00
NORMALIZED TO
2.50
VGS = 10V @ 19A
2.00
1.50
1.00
VGS = 10V
VGS = 20V
0.50
0
0
.20
20 40 60 80 100 120
ID, DRAIN CURRENT (A)
FIGURE 4, RDS(ON) vs Drain Current
.15
1.10
1.05
.00
.95
0.90
0.85
-50
0
50
100
150
TJ, Junction Temperature (°C)
FIGURE 6, Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
- 50
0
50
100
150
TC, Case Temperature (°C)
FIGURE 8, Threshold Voltage vs Temperature
60
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
50
@ <0.5 % DUTY CYCLE
APT38N60B_SC6
40
30
20
10
TJ= 25°C
TJ= 125°C
TJ= -55°C
0
0 1 2 3 4 5 6 7 8 9 10
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Transfer Characteristics
40
35
30
25
20
15
10
5
0
25
50
75
100 125 150
TC, CASE TEMPERATURE (C°)
FIGURE 5, Maximum Drain Current vs Case Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (C°)
FIGURE 7, On-Resistance vs Temperature
800
100
10
Rds(on)
100µs 1ms
10µs
10ms
1
100ms
0.1
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 9, Maximum Safe Operating Area