APT38N60BC6 Datasheet, PDF (1/5 Pages) Microsemi Corporation – C Super Junction MOSFET

APT38N60BC6
APT38N60SC6
600V 38A 0.099Ω
COOLMOS
Power Semiconductors
Super Junction MOSFET
• Ultra Low R_DS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Q_g
• Avalanche Energy Rated
• Extreme ^dv/dt Rated
• Popular TO-247 or Surface Mount D³ package.
TO-247
D³PAK
D
G
S
MAXIMUM RATINGS
All Ratings per die: T_C = 25°C unless otherwise specified.
Symbol Parameter
APT38N60B_SC6
UNIT
V_DSS
I_D
I_DM
V_GS
P_D
T_J,T_STG
T_L
dv/dt
I_AR
E_AR
E_AS
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Continuous Drain Current @ T_C = 100°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Total Power Dissipation @ T_C = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V_DS = 480V, I_D = 38A, T_J = 125°C)
Avalanche Current ²
Repetitive Avalanche Energy ² ( Id = 6.6A, Vdd = 50V )
Single Pulse Avalanche Energy ( Id = 6.6A, Vdd = 50V )
600
38
24
112
±20
278
-55 to 150
260
15
6.6
1.2
796
Volts
Amps
Volts
Watts
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX UNIT
BV_(DSS) Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250μA)
600
R_DS(on) Drain-Source On-State Resistance ³ (V_GS = 10V, I_D = 18A)
0.099
I_DSS
Zero Gate Voltage Drain Current (V_DS = 600V, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 600V, V_GS = 0V, T_C = 150°C)
25
100
I_GSS
Gate-Source Leakage Current (V_GS = ±20V, V_DS = 0V)
±100
V_GS(th) Gate Threshold Voltage (V_DS = V_GS, I_D = 1.2mA)
2.5
3
3.5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Volts
Ohms
μA
nA
Volts
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com