ARF467FL Datasheet, PDF (3/4 Pages) Microsemi Corporation – RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE

TYPICAL PERFORMANCE CURVES
1.10
25
ARF467FL
1.05
20
1.00
VGS = 9V
8V
0.95
15
0.90
0.85
0.80
0.75
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
0.40
10
7V
5
6V
5V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
0.35
D = 0.9
0.30
0.25
0.7
0.20
0.15
0.10
0.05
0
10^-5
0.5
Note:
0.3
t1
0.1
SINGLE PULSE
0.05
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 7a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Dissipated Power
(Watts)
T_J ( C)
T_C ( C)
0.126
0.170
0.0535
0.00748F
0.0556F
0.657F
Z_EXT are the external thermal
impedances: Case to sink, sink to
ambient, etc. Set to zero when modeling
only the case to junction.
Figure 7b, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
Z_IN (Ω)
Z_OL (Ω)
2.0
18 - j 11
13.5
1.3 - j 5
27.1
.40 - j 2.6
40.7
.20 - j 1.6
65
.11 + j 0.6
30 - j 1.7
25.7 - j 9.8
18 - j 13.3
12 - j 12.6
6.2 - j 8.9
Zin - Gate shunted with 25Ω
I_DQ = 100mA
Z_OL - Conjugate of optimum load for 300 W output at Vdd = 150V