ARF467FL Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE

RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
ARF467FL
D
G
S
ARF467FL
200V 300W 45MHz
The ARF467FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial
RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency classes of
operation.
• Specified 150 Volt, 40.68 MHz Characteristics:
• Low Cost Flangeless RF Package.
•
Output Power = 300 Watts.
• Low Vth thermal coefficient.
•
Gain = 16dB (Class AB)
• Low Thermal Resistance.
•
Efficiency = 75% (Class C)
• Optimized SOA for Superior Ruggedness.
MAXIMUM RATINGS
Symbol Parameter
V_{DSS Drain-Source Voltage}
V_DGO
I_D
V_GS
P_D
Drain-Gate Voltage
Continuous Drain Current @ T_C = 25°C
Gate-Source Voltage
Total Power Dissipation @ T_C = 25°C
R_θJC
T_J,T_STG
T_L
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: T_C = 25°C unless otherwise specified.
ARF467FL
UNIT
1000
1000
Volts
12
Amps
±30
Volts
425
Watts
0.35
°C/W
-55 to 175
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BV_DSS
R_DS(ON)
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250 µA)
Drain-Source On-State Resistance ¹ (V_GS = 10V^, I_D = 6.5A⁾
I_DSS
Zero Gate Voltage Drain Current (V_DS = 1000V, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 800V, V_GS = 0V, T_C = 125°C)
I_GSS Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
g_fs
Forward Transconductance (V_DS = 25V, I_D = 6.5A)
V_GS(TH) Gate Threshold Voltage (V_DS = V_GS, I_D = 1mA)
MIN TYP MAX UNIT
1000
Volts
1.0 ^ohms
25
µA
250
±100 nA
4
6
9
mhos
3
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com