ARF467FL Datasheet, PDF (2/4 Pages) Microsemi Corporation – RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE

DYNAMIC CHARACTERISTICS
Symbol Characteristic
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V_GS = 0V
V_DS = 50V
f = 1 MHz
V_GS = 15V
V_DD = 500 V
I_D = 12A @ 25°C
R_G = 1.6Ω
ARF467FL
MIN TYP MAX UNIT
1900
230
pF
40
12
8
ns
41
10
FUNCTIONAL CHARACTERISTICS
Symbol Characteristic
G_{PS Common Source Amplifier Power Gain}
η
Drain Efficiency
ψ
Electrical Ruggedness VSWR 10:1
Test Conditions
f = 40.68 MHz
V_GS = 2.5V V_DD = 150V
P_out = 300W
MIN TYP MAX UNIT
14
16
dB
70
75
%
No Degradation in Output Power
1 Pulse Test: Pulse width < 380µS, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
30
Class C
25
V_DD = 150V
P_out = 150W
20
15
10
5
0
30 45 60 75 90 105 120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
35
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
30
@ <0.5 % DUTY CYCLE
TJ = -55°C
25
20
15
10
TJ = +25°C
5
TJ = +125°C
TJ = -55°C
0
0
2
4
6
8
10
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
4,000
1,000
500
Ciss
Coss
100
Crss
50
10
.1
1
10
100 200
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
48
OPERATION HERE
LIMITED BY R_DS (ON)
10
5
100uS
1
.5
TC =+25°C
TJ =+175°C
SINGLE PULSE
.1
1
10
100
1000
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
1mS
10mS
100mS