HAL856 Datasheet, PDF(7/42 Page) Micronas – Programmable Linear Hall-Effect Sensor with Arbitrary Output Characteristic (2-Wire)

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HAL856 Datasheet, PDF (7/42 Pages) Micronas – Programmable Linear Hall-Effect Sensor with Arbitrary Output Characteristic (2-Wire)

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DATA SHEET

HAL 856

2. Functional Description

2.1. General Function

The HAL856 is a monolithic integrated circuit which

provides an output signal proportional to the magnetic

flux through the Hall plate.

The external magnetic field component perpendicular

to the branded side of the package generates a Hall

voltage. The Hall IC is sensitive to magnetic north and

south polarity. This voltage is converted to a digital

value, processed in the Digital Signal Processing Unit

(DSP) according to the settings of the EEPROM regis-

ters, converted to the different digital output formats

(PWM and Biphase-M serial protocol) and provided by

an output current source. The function and the param-

eters for the DSP are explained in Section 2.2. on

page 9.

The setting of the LOCK register disables the program-

ming of the EEPROM memory for all time. This regis-

ter cannot be reset.

As long as the LOCK register is not set, the output

characteristic can be adjusted by programming the

EEPROM registers. The IC is addressed by modulat-

ing the supply voltage (see Fig. 2â1). After detecting a

command, the sensor reads or writes the memory and

answers with a digital modulation of the current con-

sumption. There is no transmission of the PWM signal

during the communication.

When no command is detected or processed and the

supply voltage is within the recommended operating

range the PWM or Biphase-M output is enabled.

Internal temperature compensation circuitry and the

choppered offset compensation enables operation

over the full temperature range with minimal changes

in accuracy and high offset stability. The circuitry also

rejects offset shifts due to mechanical stress from the

package. The non-volatile memory consists of redun-

dant EEPROM cells. In addition, the sensor IC is

equipped with devices for overvoltage and reverse-

voltage protection at all pins.

HAL

856

VDD

DATA

GND

Fig. 2â1: Programming with VDD modulation

VDD

Bandgap

Reference

and Protection

Devices

Temperature

Dependent

Bias

Oscillator

Switched

Hall Plate

A/D

Converter

Digital

Signal

Processing

Current Output

DATA

GND

Supply

Level

Detection

Lock

Control

Fig. 2â2: HAL856 block diagram

EEPROM Memory

Micronas

March 23, 2010; DSH000142_002EN

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