HAL856 Datasheet, PDF (31/42 Pages) Micronas – Programmable Linear Hall-Effect Sensor with Arbitrary Output Characteristic (2-Wire)

DATA SHEET
HAL 856
Table 4–1: Temperature compensation, continued
Typ. Temperature
TC
Coefficient of
Magnet (ppm/K)
−1740
−6
−1810
−5
−1880
−4
−1950
−3
−2020
−2
−2100
−1
TCSQ
18
19
20
21
22
23
4.4. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T_J) is higher
than the temperature outside the package (ambient
temperature T_A).
T_J = T_A + ΔT
At static conditions and continuous operation, the fol-
lowing equation applies:
ΔT = I_DD,mean × V_DD × R_thjx
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
I_DD,mean and R_th, and the max. value for V_DD from the
application.
Example with typical given values:
I_DD,mean = 0.011 A (I_DD,high = 15 mA, I_DD,low = 7 mA,
duty-cycle = 50%)
V_DD = 10 V
R_thjc = 61 K/W
T_jmax = 170
ΔT is calculated as follows:
ΔT
=
0,011
A
×
10V
×
61
-^K---
W
=
6,71
The maximum ambient temperature T_Amax can be
calculated as:
T_Amax = T_Jmax – ΔT
Micronas
March 23, 2010; DSH000142_002EN
31