HAL710_1 Datasheet, PDF (4/19 Pages) Micronas – Hall-Effect Sensors with Direction Detection

HAL 710, HAL 730
DATA SHEET
Hall-Effect Sensors with Direction Detection
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL 710 and the HAL 730 are monolithic inte-
grated Hall-effect sensors manufactured in CMOS
technology with two independent Hall plates S1 and
S2 spaced 2.35 mm apart. The devices have two
open-drain outputs:
– The Count Output operates like a single latched Hall
switch according to the magnetic field present at
Hall plate S1 (see Fig. 4–1).
– The Direction Output indicates the direction of a lin-
ear or rotating movement of magnetic objects.
In combination with an active target providing a
sequence of alternating magnetic north and south
poles, the sensors generate the signals required to
control position, speed, and direction of the target
movement.
The internal circuitry evaluates the direction of the
movement and updates the Direction Output at every
edge of the Count Signal (rising and falling). The state
of the Direction Output only changes at a rising or fall-
ing edge of the Count Output.
The design ensures a setup time for the Direction Out-
put with respect to the corresponding Count Signal
edge of 1/2 clock periods (1 μs minimum).
The devices include temperature compensation and
active offset compensation. These features provide
excellent stability and matching of the switching points
in the presence of mechanical stress over the whole
temperature and supply voltage range. This is required
by systems determining the direction from the compar-
ison of two signals.
The sensors are designed for industrial and automo-
tive applications and operate with supply voltages
from 3.8 V to 24 V in the ambient temperature range
from −40 °C up to 125 °C.
The HAL 710 and the HAL 730 are available in the
SMD-package SOT89B-2.
1.1. Features
– generation of Count Signals and Direction Signals
– delay of the Count Signals with respect to the
Direction Signal of 1 μs minimum
– switching type: latching
– switching offset compensation at typically 150 kHz
– operation from 3.8 V to 24 V supply voltage
– overvoltage protection at all pins
– reverse-voltage protection at V_DD-pin
– robustness of magnetic characteristics against
mechanical stress
– short-circuit protected open-drain outputs
by thermal shut down
– constant switching points over a wide
supply voltage range
– EMC corresponding to ISO 7637
1.2. Family Overview
The types differ according to the behavior of the Direc-
tion Output.
Type
HAL 710
HAL 730
Direction Output:
Definition of Output States
Output high, when
edge of comparator 1 precedes
edge of comparator 2
Output high, when
edge of comparator 2 precedes
edge of comparator 1
4
Oct. 13, 2009; DSH000031_002EN
Micronas