HAL710_1 Datasheet, PDF (11/19 Pages) Micronas – Hall-Effect Sensors with Direction Detection

DATA SHEET
HAL 710, HAL 730
3.6. Characteristics
at T_J = −40 °C to +140 °C, V_DD = 3.8 V to 24V, GND = 0 V
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for T_J = 25 °C and V_DD = 5 V.
Symbol
I_DD
I_DD
V_DDZ
V_OZ
V_OL
V_OL
I_OH
Parameter
Supply Current
Supply Current
over Temperature Range
Overvoltage Protection
at Supply
Overvoltage Protection
at Output
Output Voltage
Output Voltage over
Temperature Range
Output Leakage Current
Pin No.
1
1
1
2,3
2,3
2,3
2,3
I_OH
f_osc
t_en(O)
t_r
Output Leakage Current over
2,3
Temperature Range
Internal Sampling Frequency
−
over Temperature Range
Enable Time of Output after
1
Setting of V_DD
Output Rise Time
2,3
t_f
Output FallTime
2,3
R_thSB
case
Thermal Resistance Junction to −
Substrate Backside
SOT89B-2
Min.
3
2
−
−
−
−
−
−
100
−
−
−
−
Typ.
5.5
7
28.5
28
130
130
0.06
−
150
50
0.2
0.2
150
Max.
9
10
Unit
mA
mA
32
V
32
V
280
mV
400
mV
0.1
μA
10
μA
−
kHz
−
μs
−
μs
−
μs
200
K/W
Test Conditions
T_J = 25 °C
I_DD = 25 mA, T_J = 25 °C, t = 2 ms
I_OL = 20 mA, T_J = 25 °C, t = 15 ms
I_OL = 10 mA, T_J = 25 °C
I_OL = 10 mA,
Output switched off, T_J = 25 °C,
V_OH = 3.8 V to 24 V
Output switched off, T_J ≤ 140 °C,
V_OH = 3.8 V to 24 V
V_DD = 12 V,
B>B_on + 2 mT or B<B_off − 2 mT
V_DD = 12 V, R_L = 2.4 kΩ, C_L =
20 pF
V_DD = 12 V, R_L = 2.4 kΩ, C_L =
20 pF
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
pad size
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–2: Recommended pad size SOT89B-2
Dimensions in mm
Micronas
Oct. 13, 2009; DSH000031_002EN
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