HAL300_1 Datasheet, PDF (4/22 Pages) Micronas – Differential Hall Effect Sensor IC

HAL300
DATA SHEET
Differential Hall Effect Sensor IC
in CMOS technology
Release Notes: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL 300 is a differential Hall switch produced in
CMOS technology. The sensor includes 2 temperature-
compensated Hall plates (2.05 mm apart) with active off-
set compensation, a differential amplifier with a Schmitt
trigger, and an open-drain output transistor (see Fig.
2–1).
The HAL 300 is a differential sensor which responds to
spatial differences of the magnetic field. The Hall volt-
ages at the two Hall plates, S₁ and S₂, are amplified with
a differential amplifier. The differential signal is
compared with the actual switching level of the internal
Schmitt trigger. Accordingly, the output transistor is
switched on or off.
The sensor has a bipolar switching behavior and re-
quires positive and negative values of ΔB = B_S1 – B_S2 for
correct operation.
The HAL 300 is an ideal sensor for applications with a ro-
tating multi-pole-ring in front of the branded side of the
package (see Fig. 3–1, Fig. 3–2 and Fig. 3–3), such as
ignition timing and revolution counting.
For applications in which a magnet is mounted on the
back side of the package (back-biased applications), the
HAL320 is recommended.
The active offset compensation leads to constant mag-
netic characteristics over supply voltage and tempera-
ture.
The sensor is designed for industrial and automotive ap-
plications and operates with supply voltages from 4.5 V
to 24 V in the ambient temperature range from –40 °C
up to 150 °C.
The HAL 300 is available in the SMD-package
SOT89B-2 and in the leaded versions TO92UA-3 and
TO92UA-4.
1.1. Features:
– distance between Hall plates: 2.05 mm
– operates from 4.5 V to 24 V supply voltage
– switching offset compensation at 62 kHz
– overvoltage protection
– reverse-voltage protection at V_DD-pin
– short-circuit protected open-drain output by thermal
shutdown
– operates with magnetic fields from DC to 10 kHz
– output turns low with magnetic south pole on branded
side of package and with a higher magnetic flux densi-
ty in sensitive area S1 as in S2
– on-chip temperature compensation circuitry mini-
mizes shifts of the magnetic parameters over temper-
ature and supply voltage range
– the decrease of magnetic flux density caused by rising
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of hystere-
sis
– EMC corresponding to ISO 7637
1.2. Marking Code
Type
HAL 300
Temperature Range
A
K
300A
300K
1.3. Operating Junction Temperature Range (T_J)
A: T_J = –40 °C to +170 °C
K: T_J = –40 °C to +140 °C
The relationship between ambient temperature (T_A) and
junction temperature (T_J) is explained in section 4.1. on
page 20.
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