HAL300_1 Datasheet, PDF (14/22 Pages) Micronas – Differential Hall Effect Sensor IC

HAL300
DATA SHEET
3.6. Characteristics at T_J = –40 °C to +170 °C , V_DD = 4.5 V to 24 V, GND = 0 V
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for T_J = 25 °C and V_DD = 12 V
Symbol
I_DD
I_DD
V_DDZ
V_OZ
Parameter
Pin No.
Limit Values
Unit
Min.
Typ.
Max.
Supply Current
1
4.0
5.5
6.8
mA
Supply Current over
Temperature Range
1
2.5
5
7.5
mA
Overvoltage Protection
at Supply
1
–
28.5
32.5
V
Overvoltage Protection at Output 3
–
28
32.5
V
V_OL
Output Voltage over
Temperature Range
3
–
180
400
mV
I_OH
Output Leakage Current over
3
–
0.06
10
μA
Temperature Range
f_osc
Internal Oscillator
Chopper Frequency
–
–
62
–
kHz
t_en(O)
Enable Time of Output
after Setting of V_DD
3
–
35
–
μs
t_r
Output Rise Time
3
–
80
400
ns
t_f
Output Fall Time
3
–
45
400
ns
R_thJSB
case
SOT89B-2
R_thJS
case
TO92UA-3,
TO92UA-4
Thermal Resistance Junction to
Substrate Backside
Thermal Resistance
Junction to Soldering Point
–
150
200
K/W
–
150
200
K/W
Conditions
T_J = 25 °C
I_DD = 25 mA, T_J = 25 °C,
t = 20 ms
I_OL = 25 mA, T_J = 25 °C,
t = 20 ms
I_O = 20 mA
V_OH = 4.5 V... 24 V,
DB < DB_OFF , T_J ≤ 150 °C
V_DD = 12 V,
DB > DB_ON + 2mT or
DB < DB_OFF – 2mT
V_DD = 12 V, RL = 820 Ω,
CL = 20 pF
V_DD = 12 V, RL = 820 Ω,
CL = 20 pF
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
pad size see Fig. 3–6
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–6:
Recommended footprint SOT89B, Dimensions in mm
All dimensions are for reference only. The pad size may vary depending on the requirements of the soldering process.
14
Micronas