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HAL810 Datasheet, PDF (25/30 Pages) Micronas – Programmable Linear Hall-Effect Sensor
DATA SHEET
HAL 810
5. Programming of the Sensor
5.1. Definition of Programming Pulses
The sensor is addressed by modulating a serial tele-
gram on the supply voltage. The sensor answers with
a serial telegram on the output pin.
The bits in the serial telegram have a different bit time
for the VDD-line and the output. The bit time for the
VDD-line is defined through the length of the Sync Bit
at the beginning of each telegram. The bit time for the
output is defined through the Acknowledge Bit.
A logical “0” is coded as no voltage change within the
bit time. A logical “1” is coded as a voltage change
between 50% and 80% of the bit time. After each bit, a
voltage change occurs.
5.2. Definition of the Telegram
Each telegram starts with the Sync Bit (logical 0),
3 bits for the Command (COM), the Command Parity
Bit (CP), 4 bits for the Address (ADR), and the
Address Parity Bit (AP).
There are different telegram formats:
– Write a register (see Fig. 5–2)
After the AP Bit, follow 14 Data Bits (DAT) and the
Data Parity Bit (DP). If the telegram is valid and the
command has been processed, the sensor answers
with an Acknowledge Bit (logical 0) on the output.
– Read a register (see Fig. 5–3)
After evaluating this command, the sensor answers
with the Acknowledge Bit, 14 Data Bits, and the
Data Parity Bit on the output.
– Programming the EEPROM cells (see Fig. 5–4)
After evaluating this command, the sensor answers
with the Acknowledge Bit. After the delay time tw,
the supply voltage rises up to the programming volt-
age.
tr
tf
VDDH
logical 0
tp0
or
tp0
VDDL
VDDH
logical 1
VDDL
tp0
tp1
tp1
or
tp0
Fig. 5–1: Definition of logical 0 and 1 bit
Table 5–1: Telegram parameters
Symbol
Parameter
Pin
VDDL
Supply Voltage for Low Level
1
during Programming
VDDH
Supply Voltage for High Level
1
during Programming
tr
Rise Time
1
tf
Fall Time
1
tp0
Bit Time on VDD
1
tpOUT
Bit Time on Output Pin
3
tp1
Voltage Change for Logical 1
1, 3
VDDPROG
Supply Voltage for
1
Programming the EEPROM
tPROG
trp
tfp
tw
Programming Time for EEPROM
1
Rise Time of Programming Voltage
1
Fall Time of Programming Voltage
1
Delay Time of Programming Voltage 1
after Acknowledge
Min.
5
Typ.
5.6
Max.
6
Unit
V
Remarks
6.8
8.0
8.5
V
−
−
0.05 ms
−
−
0.05 ms
1.7
1.75 1.8
ms
2
3
4
ms
50
65
80
%
12.4 12.5 12.6 V
tp0 is defined through the Sync Bit
tpOUT is defined through the
Acknowledge Bit
% of tp0 or tpOUT
95
100
105
ms
0.2
0.5
1
ms
0
−
1
ms
0.5
0.7
1
ms
Micronas
Feb. 6, 2009; DSH000034_003EN
25