HAL810 Datasheet, PDF (19/30 Pages) Micronas – Programmable Linear Hall-Effect Sensor

DATA SHEET
HAL 810
3.6. Characteristics
at T_J = −40 °C to +170 °C, V_DD = 4.5 V to 5.5 V, GND = 0 V after programming and locking of the device,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for T_J = 25 °C and V_DD = 5 V.
Symbol
Parameter
Pin No. Min. Typ. Max. Unit Conditions
I_DD
Supply Current
1
−
7
10 mA
over Temperature Range
V_DDZ
Overvoltage Protection
1
at Supply
−
17.5 20 V
I_DD = 25 mA, T_J = 25 °C, t = 20 ms
V_OZ
Overvoltage Protection
3
−
17 19.5 V
I_O = 10 mA, T_J = 25 °C, t = 20 ms
at Output
Output Duty Cycle
Resolution
3
−
−
11 bit
1)
INL
Non-Linearity of Output Duty 3
−0.5 0
0.5 %
2)
Cycle over Temperature
ΔT_K
Variation of Linear
3
−400 0
400 ppm/k if TC and TCSQ suitable for the
Temperature Coefficient
application
ΔDC_MIN-DUTY Accuracy of Minimum Duty 3
Cycle over Temperature
Range
−1 0
1
%
ΔDC_MAX-
DUTY
Accuracy of Maximum Duty 3
Cycle over Temperature
Range
−1 0
1
%
V_OUTH
V_OUTL
f_PWM
Output High Voltage
3
Output Low Voltage
3
PWM Output Frequency
−
over Temperature Range
−
4.8 −
V
−
0.2 −
V
105 125 145 Hz
V_DD = 5 V, −1 mA ≤ I_OUT ≤ 1 mA
V_DD = 5 V, −1 mA ≤ I_OUT ≤ 1 mA
f_ADC
Internal ADC Frequency
−
110 128 150 kHz
over Temperature Range
t_POD
Power-Up Time (Time to
−
reach valid duty cycle)
−
−
25 ms
R_OUT
Output Resistance over
3
Recommended Operating
Range
−
1
10 Ω
V_OUTLmax ≤ V_OUT ≤ V_OUTHmin
TO92UT Package
Thermal Resistance
−
R_thja
R_thjc
Junction to Ambient
Junction to Case
−
−
235
−
−
61
1) _{if the Hall IC is programmed accordingly}
2) _{if more than 50% of the selected magnetic field range are used}
measured on an 1s0p board
Micronas
Feb. 6, 2009; DSH000034_003EN
19