HAL810 Datasheet, PDF (20/30 Pages) Micronas – Programmable Linear Hall-Effect Sensor

HAL 810
DATA SHEET
3.7. Magnetic Characteristics
at T_J = −40 °C to +170 °C, V_DD = 4.5 V to 5.5 V, GND = 0 V after programming and locking of the device,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for T_J = 25 °C and V_DD = 5 V.
Symbol
B_Offset
Parameter
Magnetic Offset
ΔB_Offset/ΔT
Magnetic Offset Change
due to T_J
Pin No.
3
Min.
−0.5
Typ.
0
Max.
0.5
Unit
mT
−10
0
10
μT/K
Conditions
B = 0 mT, T_J = 25 °C,
unadjusted sensor
B = 0 mT
3.8. Open-Circuit Detection
at T_J = −40 °C to +170 °C, Typical Characteristics for T_J = 25 °C
Symbol
V_OUT
V_OUT
Parameter
Output Voltage
at Open V_DD Line
Output Voltage
at Open GND Line
Pin No.
3
Min.
0
Typ.
0
Max.
0.2
Unit
V
3
4.7
4.8
5
V
Conditions
V_DD = 5 V
R_L = 10 kΩ to GND
V_DD = 5 V
R_L = 10 kΩ to GND
3.9. Typical Characteristics
mA
20
15
I_DD
10
5
0
–5
–10
–15
–20
–15 –10 –5 0
T_A = –40 °C
T_A = 25 °C
T_A=150 °C
5 10 15 20 V
V_DD
Fig. 3–5: Typical current consumption
versus supply voltage
mA
10
I_{DD 8}
V_DD = 5 V
6
4
2
0
–50 0
50 100 150 200 °C
T_A
Fig. 3–6: Typical current consumption
versus ambient temperature
20
Feb. 6, 2009; DSH000034_003EN
Micronas