HAL810 Datasheet, PDF (24/30 Pages) Micronas – Programmable Linear Hall-Effect Sensor

HAL 810
DATA SHEET
4.4. Undervoltage Behavior
In a voltage range of below 4.5 V to approximately
3.5 V, the typical operation of the HAL810 is given and
predictable for most sensors. Some of the parameters
may be out of the specification. Below about 3.5 V, the
digital processing is reset. If the supply voltage rises
above approx. 3.5 V once again, a startup time of
about 20 µs elapses, for the digital signal processing
to occur.
4.5. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T_J) is higher
than the temperature outside the package (ambient
temperature T_A).
T_J = T_A + ΔT
At static conditions and continuous operation, the fol-
lowing equation applies:
ΔT = I_DD * V_DD * R_th
For typical values, use the typical parameters. For
worst case calculation, use the maximum parameters
for I_DD and R_th, and the maximum value for V_DD from
the application.
For V_DD = 5.5 V, R_th = 235 K/W, and I_DD = 10 mA the
temperature difference ΔT = 12.93 K.
For all sensors, the junction temperature T_J is speci-
fied. The maximum ambient temperature T_Amax is cal-
culated as follows:
T_Amax = T_Jmax − ΔT
4.6. EMC and ESD
The HAL810 is designed for a stabilized 5 V supply.
Interferences and disturbances conducted along the
12 V on-board system (product standard ISO 7637
part 1) are not relevant for these applications.
For applications with disturbances by capacitive or
inductive coupling on the supply line or radiated distur-
bances, the application circuit shown in Fig. 4–1 is rec-
ommended. Applications with this arrangement
passed the EMC tests according to the product stan-
dard ISO 7637 part 3 (Electrical transient transmission
by capacitive or inductive coupling).
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
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Feb. 6, 2009; DSH000034_003EN
Micronas