HAL556_1 Datasheet, PDF (25/26 Pages) Micronas – Two-Wire Hall-Effect Sensor Family

DATA SHEET
HAL55x, HAL56x
5.4. Ambient Temperature
Due to internal power dissipation, the temperature on
the silicon chip (junction temperature T_J) is higher than
the temperature outside the package (ambient temper-
ature T_A).
T_J = T_A + ΔT
Under static conditions and continuous operation, the
following equation applies:
ΔT = I_DD × V_DD × R_TH
For all sensors, the junction temperature range T_J is
specified. The maximum ambient temperature T_Amax
can be calculated as:
T_Amax = T_Jmax – ΔT
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
I_DD and R_th, and the max. value for V_DD from the appli-
cation.
Due to the range of I_DDhigh, self-heating can be critical.
The junction temperature can be reduced with pulsed
supply voltage. For supply times (t_on) ranging from
30 μs to 1 ms, the following equation can be used:
ΔT
=
I_DD
×
V_DD
×
R_th
×
-------^t--^o---ⁿ-------
t_off + t_on
5.5. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–3). The series resistor
and the capacitor should be placed as closely as pos-
sible to the HAL sensor.
Applications with this arrangement passed the EMC
tests according to the product standard ISO 7637.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
R_V1
100 Ω
V_EMC
R_V2
30 Ω
1 V_DD
4.7 nF
2 GND
Fig. 5–3: Recommended EMC test circuit
Micronas
Aug. 11, 2009; DSH000026_004EN
25