HAL556_1 Datasheet, PDF (14/26 Pages) Micronas – Two-Wire Hall-Effect Sensor Family

HAL55x, HAL56x
DATA SHEET
3.6. Characteristics
at T_J = −40 °C to +140 °C, V_DD = 4 V to 24 V, GND = 0 V,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for T_J = 25 °C and V_DD = 12 V.
Symbol
Parameter
Pin No. Min.
Typ.
Max.
Unit
I_DD
Low Current Consumption
1
2
3.3
5
mA
over Temperature Range
I_DD
High Current Consumption
1
12
14.3
17
mA
over Temperature Range
V_DDZ
Overvoltage Protection
at Supply
1
−
28.5
32
V
f_osc
Internal Oscillator
Chopper Frequency
−
−
145
−
kHz
t_en(O)
Enable Time of Output after
1
−
30
−
μs
Setting of V_DD
t_r
Output Rise Time
1
−
0.4
1.6
μs
t_f
Output Fall Time
1
−
0.4
1.6
μs
R_thJSB
Thermal Resistance Junction
−
−
150
200
K/W
case
to Substrate Backside
SOT89B-1
R_thJA
Thermal Resistance Junction
−
−
150
200
K/W
case
to Soldering Point
TO92UA-1,
TO92UA-2
1)_{B > BON + 2 mT or B < BOFF - 2 mT for HAL55x, B > BOFF + 2 mT or B < BON - 2 mT for HAL56x}
Conditions
I_DD = 25 mA, T_J = 25 °C,
t = 20 ms
1)
V_DD = 12 V, R_s = 30 Ω
V_DD = 12 V, R_s = 30 Ω
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
for pad size see Fig. 3–1
1.80
1.05
1.45
2.90
0.50
1.05
1.50
Fig. 3–1: Recommended pad size SOT89B-1
Dimensions in mm
14
Aug. 11, 2009; DSH000026_004EN
Micronas