HAL1000UT-A Datasheet, PDF (23/30 Pages) Micronas – Programmable Hall Switch

DATA SHEET
Temperature
TC
Coefficient of
Magnet (ppm/K)
−1500
−12
−1570
−13
−1640
−14
−1710
−15
−1780
−16
−1870
−17
−1950
−18
−2030
−19
−2100
−20
−2180
−21
−2270
−22
−2420
−24
−2500
−25
−2600
−26
−2700
−27
−2800
−28
−2900
−29
−3000
−30
−3100
−31
TCSQ
20
20
21
21
22
22
23
23
24
24
25
26
27
27
28
28
29
30
31
HAL 1000
4.3. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T_J) is higher
than the temperature outside the package (ambient
temperature T_A).
T_J = T_A + ΔT
At static conditions and continuous operation, the fol-
lowing equation applies:
ΔT = I_DD * V_DD * R_th
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
I_DD and R_th, and the max. value for V_DD from the appli-
cation.
For V_DD = 5.5 V, R_thja = 235 K/W, and I_DD = 10 mA, the
temperature difference ΔT = 12.93 K.
For all sensors, the junction temperature T_J is speci-
fied. The maximum ambient temperature T_Amax is cal-
culated as follows:
T_Amax = T_Jmax −ΔT
4.4. EMC and ESD
The HAL1000 is designed for a stabilized 5 V supply.
EMC testing related to “Road vehicles − Electrical dis-
turbances from conduction and coupling − Part 2:
Electrical transient conduction along supply lines only”
(product standard ISO 7637-2) is not relevant for these
applications.
For applications with disturbances by capacitive or
inductive coupling on the supply line or radiated distur-
bances, the application circuit shown in Fig. 4–1 is
recommended.
Micronas
Feb. 3, 2009; DSH000015_003EN
23