HAL1000UT-A Datasheet, PDF (22/30 Pages) Micronas – Programmable Hall Switch

HAL 1000
4. Application Notes
4.1. Application Circuit
For EMC protection, it is recommended to connect one
ceramic 4.7 nF capacitor between ground and the sup-
ply voltage, and between ground and the output pin. In
addition, the input of the controller unit should be
pulled-down with a resistor of 10 kΩ or more and a
ceramic 4.7 nF capacitor.
Please note that during programming, the sensor will
be supplied repeatedly with the programming voltage
of 12.5 V for 100 ms. All components connected to the
VDD line at this time must be able to resist this volt-
age.
V_DD
4.7 nF
HAL1000
OUT
4.7 nF
4.7 nF
GND
μC
≥10 kΩ
Fig. 4–1: Recommended application circuit
4.2. Temperature Compensation
The relationship between the temperature coefficient
of the magnet and the corresponding TC and TCSQ
codes for linear compensation is given in the following
table. In addition to the linear change of the magnetic
field with temperature, the curvature can be adjusted
as well. For this purpose, other TC and TCSQ combi-
nations are required which are not shown in the table.
Please contact Micronas for more detailed information
on this higher order temperature compensation.
The HAL815 and HAL1000 contain the same temper-
ature compensation circuits. If an optimal setting for
the HAL815 is already available, the same settings
may be used for the HAL1000.
Temperature
TC
Coefficient of
Magnet (ppm/K)
400
31
300
28
200
24
100
21
0
18
−50
17
−90
16
−130
15
−170
14
−200
13
−240
12
−280
11
−320
10
−360
9
−410
8
−450
7
−500
6
−550
5
−600
4
−650
3
−700
2
−750
1
−810
0
−860
−1
−910
−2
−960
−3
−1020
−4
−1070
−5
−1120
−6
−1180
−7
−1250
−8
−1320
−9
−1380
−10
−1430
−11
22
Feb. 3, 2009; DSH000015_003EN
DATA SHEET
TCSQ
6
7
8
9
10
10
11
11
11
12
12
12
13
13
13
13
14
14
14
14
15
15
15
16
16
16
17
17
17
18
18
19
19
20
Micronas