HAL401 Datasheet, PDF (18/20 Pages) Micronas – Linear Hall-Effect Sensor IC

HAL401
DATA SHEET
4. Application Notes
Mechanical stress on the device surface (caused by the
package of the sensor module or overmolding) can influ-
ence the sensor performance.
The parameter V_OUTACpp (see Fig. 2–2) increases with
external mechanical stress. This can cause linearity er-
rors at the limits of the recommended operation condi-
tions.
4.1. Ambient Temperature
Due to internal power dissipation, the temperature on
the silicon chip (junction temperature T_J) is higher than
the temperature outside the package (ambient tempera-
ture T_A).
T_J = T_A + ΔT
At static conditions and continuous operation, the follow-
ing equation applies:
ΔT = I_DD * V_DD * R_thJSB
For all sensors, the junction temperature range T_J is
specified. The maximum ambient temperature T_Amax
can be calculated as:
T_Amax = T_Jmax – ΔT
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for I_DD and
R_th, and the max. value for V_DD from the application.
4.2. EMC and ESD
Please contact Micronas for detailed information on
EMC and ESD results.
4.3. Application Circuit
The normal integrating characteristics of a voltmeter is
sufficient for signal filtering.
V_DD
4.7n
1
V_DD
330 p
HAL 401
2
OUT1
1k
3
1k
OUT2
330 p
47 n
3.3 k
6.8 n
3.3 k
47 n
Oscillo-
scope
Ch1
Ch2
GND
4
Do not connect OUT1 or OUT2 to Ground.
Fig. 4–1: Filtering of output signals
Display the difference between channel 1 and channel
2 to show the Hall voltage. Capacitors 4.7 nF and 330 pF
for electromagnetic immunity are recommended.
V_DD
1
V_DD
HAL 401
OUT1 ²
OUT2 ³
Voltage
Meter
High
Low
GND
4
Do not connect OUT1 or OUT2 to Ground.
Fig. 4–2: Flux density measurement with voltmeter
18
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