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HAL401 Datasheet, PDF (10/20 Pages) Micronas – Linear Hall-Effect Sensor IC | |||
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HAL401
DATA SHEET
3.6. Characteristics at TJ = â40 °C to +170 °C , VDD = 4.8 V to 12 V, GND = 0 V
at Recommended Operation Conditions (Fig. 3â2 for TA and VDD) as not otherwise specified in the column âConditionsâ.
Typical characteristics for TJ = 25 °C, VDD = 6.8 V and â50 mT < B < 50 mT
Symbol
IDD
IDD
VCM
CMRR
Parameter
Supply Current
Supply Current over
Temperature Range
Common Mode Output Voltage
VCM = (VOUT1 + VOUT2 ) / 2
Common Mode Rejection Ratio
Pin No.
1
1
Min.
11
9
2, 3
2.1
2, 3
â2.5
Typ.
14.5
14.5
2.2
0
Max.
17.1
18.5
2.3
2.5
Unit
mA
mA
V
mV/V
SB
Differential Magnetic Sensitivity 2â3
42
48.5
55
mV/mT
SB
Boffset
ÎBOFFSET/
ÎT
BW
NLdif
NLsingle
fCH
VOUTACpp
nmeff
fCflicker
fCflicker
ROUT
Differential Magnetic Sensitivity 2â3
over Temperature Range
Magnetic Offset
2â3
over Temperature
Magnetic Offset Change
Bandwidth (â3 dB)
2â3
Non-Linearity
2â3
of Differential Output
Non-Linearity
2, 3
of Single Ended Output
Chopper Frequency over Temp. 2, 3
Peak-to-Peak
2, 3
AC Output Voltage
Magnetic RMS Differential
2â3
Broadband Noise
Corner Frequency
2â3
of 1/f Noise
Corner Frequency
2â3
of 1/f Noise
Output Impedance
2, 3
37.5
46.5
55
â1.5
â0.2
1.5
â25
0
25
â
10
â
â
0.5
2
â
2
â
â
147
â
â
0.6
1.3
â
10
â
â
10
â
â
100
â
â
30
50
mV/mT
mT
μT/K
kHz
%
%
kHz
V
μT
Hz
Hz
Ω
ROUT
Output Impedance
over Temperature
2, 3
â
30
150
Ω
RthJSB
case
SOT89B-1
Thermal Resistance Junction to
Substrate Backside
â
150
200
K/W
1) with external 2 pole filter (f3db = 5 kHz), VOUTAC is reduced to less than 1 mV by limiting the bandwith
Conditions
TJ = 25 °C, IOUT1,2 = 0 mA
IOUT1,2 = 0 mA
IOUT1,2 = 0 mA,
IOUT1,2 = 0 mA,
CMRR is limited by the influ-
ence of power dissipation.
â50 mT < B < 50 mT
TJ = 25 °C
â50 mT < B < 50 mT
B = 0 mT, IOUT1,2 = 0 mA
B = 0 mT, IOUT1,2 = 0 mA
without external Filter1)
â50 mT < B < 50 mT
BW = 10 Hz to 10 kHz
B = 0 mT
B = 50 mT
IOUT1,2 v 2.5 mA,
TJ = 25 °C, VDD = 6.8 V
IOUT1,2 v 2.5 mA
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm
pad size (see Fig. 3â3)
10
Micronas
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