MT4LC8M8P4 Datasheet, PDF (8/22 Pages) Micron Technology – DRAM

8 MEG x 8
EDO DRAM
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (VCC = +3.3V ±0.3V)
AC CHARACTERISTICS
PARAMETER
OE# setup prior to RAS# during HIDDEN REFRESH cycle
EDO-PAGE-MODE READ or WRITE cycle time
EDO-PAGE-MODE READ-WRITE cycle time
Access time from RAS#
RAS# to column-address delay time
Row-address hold time
RAS# pulse width
RAS# pulse width (EDO PAGE MODE)
RAS# pulse width during Self Refresh
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period
Refresh period (2,048 cycles) “S” version
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time exiting Self Refresh
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
WE# to outputs in High-Z
WRITE command pulse width
WE# pulse widths to disable outputs
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
SYMBOL
t_ORD
t_PC
t_PRWC
t_RAC
t_RAD
t_RAH
t_RAS
t_RASP
t_RASS
t_RC
t_RCD
t_RCH
t_RCS
t_REF
t_REF
t_RP
t_RPC
t_RPS
t_RRH
t_RSH
t_RWC
t_RWD
t_RWL
t_T
t_WCH
t_WCR
t_WCS
t_WHZ
t_WP
t_WPZ
t_WRH
t_WRP
MIN
0
20
47
9
9
50
50
100
84
11
0
0
30
5
90
0
13
116
67
13
2
8
38
0
5
10
8
8
-5
MAX
50
10,000
125,000
64
128
50
12
MIN
0
25
56
12
10
60
60
100
104
14
0
0
40
5
105
0
15
140
79
15
2
10
45
0
5
10
10
10
-6
MAX
60
10,000
125,000
64
128
50
15
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
15
14
16
23
16
18
18
8 Meg x 8 EDO DRAM
D20_2.p65 – Rev. 5/00
8
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©2000, Micron Technology, Inc.