 English |
|
|
|
|
|
|
|
| PC28F128M29EWHF Datasheet, PDF (79/87 Pages) Micron Technology – Parallel NOR Flash Embedded Memory | |||
| |||
| ◁ |
32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash
Write AC Characteristics
Figure 27: Chip/Block Erase AC Timing (8-Bit Mode)
A[MAX:0]/
Aâ1
CE#
tWC
AAAh
555h
AAAh
tAS
tAH
tCS
tCH
AAAh
555h
AAAh
BAh1
tGHWL
OE#
tWP
WE#
tWPH
DQ[7:0]
tDS
AAh
tDH
55h
80h
AAh
55h
10h/
30h
Notes:
1. For a CHIP ERASE command, the address is 555h, and the data is 10h; for a BLOCK ERASE
command, the address is BAd, and the data is 30h.
2. BAd is the block address.
3. See the following tables for timing details: Read AC Characteristics, WE#-Controlled
Write AC Characteristics, and CE#-Controlled Write AC Characteristics.
PDF: 09005aef84dc44a7
m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN
79
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese