PC28F128M29EWHF Datasheet, PDF (40/87 Pages) Micron Technology – Parallel NOR Flash Embedded Memory

32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash
Program Operations
Figure 11: WRITE TO BUFFER PROGRAM Flowchart
Start
WRITE TO BUFFER
command,
block address
Write n,¹
block address
Write buffer data,
start address
First three cycles of the
WRITE TO BUFFER
PROGRAM command
WRITE TO BUFFER
confirm, block address
Read status register
(DQ1, DQ5, DQ7) at
last loaded address
Yes
DQ7 = Data
X=n
Yes
X=0
No
Abort
Yes
WRITE TO BUFFER
No
Write next data,³
program address pair
Write to a different
block address
WRITE TO BUFFER
and PROGRAM
aborted²
X=X-1
No
DQ1 = 1
Yes
No
No
DQ5 = 1
Yes
Check status register
(DQ5, DQ7) at
last loaded address
Yes
DQ7 = Data⁴
No
Fail or
abort⁵
End
Notes:
1. n + 1 is the number of addresses to be programmed.
2. The BUFFERED PROGRAM ABORT and RESET command must be issued to return the de-
vice to read mode.
3. When the block address is specified, any address in the selected block address space is
acceptable. However, when loading program buffer address with data, all addresses
must fall within the selected program buffer page.
4. DQ7 must be checked because DQ5 and DQ7 may change simultaneously.
5. If this flowchart location is reached because DQ5 = 1, then the WRITE TO BUFFER PRO-
GRAM command failed. If this flowchart location is reached because DQ1 = 1, then the
WRITE TO BUFFER PROGRAM command aborted. In both cases, the appropriate RESET
command must be issued to return the device to read mode: A RESET command if the
operation failed; a WRITE TO BUFFER PROGRAM ABORT AND RESET command if the op-
eration aborted.
6. See the Standard Command Definitions – Address-Data Cycles, 8-Bit and 16-Bit table for
details about the WRITE TO BUFFER PROGRAM command sequence.
UNLOCK BYPASS WRITE TO BUFFER PROGRAM Command
When the device is in unlock bypass mode, the UNLOCK BYPASS WRITE TO BUFFER
(25h) command can be used to program the device in fast program mode. The com-
PDF: 09005aef84dc44a7
m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN
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