PC28F128M29EWHF Datasheet, PDF (61/87 Pages) Micron Technology – Parallel NOR Flash Embedded Memory

32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash
Common Flash Interface
Table 26: Device Geometry Definition (Continued)
Address
x16
x8
2Ch
58h
2Dh
5Ah
2Eh
5Ch
2Fh
5Eh
30h
60h
31h
62h
32h
64h
33h
66h
34h
68h
35h
6Ah
36h
6Ch
37h
6Eh
38h
70h
39h
72h
3Ah
74h
3Bh
76h
3Ch
78h
Data Description
(See table Number of erase block regions. It specifies the number of regions
below) containing contiguous erase blocks of the same size.
01h = Uniform device
02h = Boot device
(See table Erase block region 1 information
below) Bits[15:0] = y, y + 1 = Number of identical-size erase blocks
Bits[31:16] = z, block size in region 1 is z x 256 bytes
(See table Erase block region 2 information
below) Bits[15:0] = y, y + 1 = Number of identical-size erase blocks
Bits[31:16] = z, block size in region 1 is z x 256 bytes
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Erase block region 3 information
Erase block region 4 information
Value
–
–
–
0
0
Note: 1. The value at 2Ah in the CFI region is set to 08h (256 bytes) due to compatibility issues.
The maximum 256-word program buffer can be used to optimize system program per-
formance.
Table 27: Erase Block Region Information
32Mb
Address
Top
Bottom
Uniform
Top
2Ch
02h
02h
01h
02h
2Dh
07h
07h
3Fh
07h
2Eh
00h
00h
00h
00h
2Fh
20h
20h
00h
20h
30h
00h
00h
01h
00h
31h
3Eh
3Eh
00h
7Eh
32h
00h
00h
00h
00h
33h
00h
00h
00h
00h
34h
01h
01h
00h
01h
64Mb
Bottom
02h
07h
00h
20h
00h
7Eh
00h
00h
01h
Uniform
01h
7Fh
00h
00h
01h
00h
00h
00h
00h
128Mb
Uniform
01h
7Fh
00h
00h
02h
00h
00h
00h
00h
PDF: 09005aef84dc44a7
m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN
61
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