MT48V16M16LFFG Datasheet, PDF (36/58 Pages) Micron Technology – MOBILE SDRAM

ADVANCE
256Mb: x16
MOBILE SDRAM
IDD SPECIFICATIONS AND CONDITIONS
(Notes: 1, 5, 6, 11, 13; notes appear on page 37;VDD = 2.5 ±0.2V or +1.8V ±0.15V, VDDQ = +1.8V ±0.15V )
PARAMETER/CONDITION
OPERATING CURRENT: Active Mode;
Burst = 2; READ or WRITE; ^tRC = ^tRC (MIN)
STANDBY CURRENT: Power-Down Mode;
All banks idle; CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH;
All banks active after ^tRCD met; No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst;
READ or WRITE; All banks active
AUTO REFRESH CURRENT
CKE = HIGH; CS# = HIGH
t_{RFC =} t_{RFC (MIN)}
t_{RFC = 7.8µs}
SYMBOL
IDD1
IDD2
MAX
-8 -10
78 75
350 350
UNITS NOTES
mA 3, 18,
19, 32
µA
32
IDD3
IDD4
IDD5
IDD6
25 25
mA 3, 12,
19, 32
90 80
mA 3, 18,
19, 32
160 150 mA 3, 12,
18, 19,
2.5 2.5 mA ^{32, 33}
DEEP POWER DOWN
IDD8
10 10 µA
IDD7 - SELF REFRESH CURRENT OPTIONS (Temperature Compensated Self Refresh)
(Notes: 1, 6, 11, 13; notes appear on page 37) VDD = 2.5 ±0.2V or +1.8V ±0.15V, VDDQ = +1.8V ±0.15V
Temperature Compensated Self Refresh
Max
-8
Parameter/Condition
Temperature
Self Refresh
85°C
600
Current:
70°C
350
CKE < 0.2V
45°C
200
15°C
160
-10
UNITS NOTES
600
µA
4
350
µA
4
200
µA
4
160
µA
4
256Mb: x16 Mobile SDRAM
MobileRamY26L_A.p65 – Pub. 5/02
36
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©2002, Micron Technology, Inc.