English
Language : 

M25P40-VMP6TGB Datasheet, PDF (34/54 Pages) Micron Technology – M25P40 3V 4Mb Serial Flash Embedded Memory
M25P40 Serial Flash Embedded Memory
Power-Up/Down and Supply Line Decoupling
Figure 21: Power-Up Timing
VCC
VCC,max
PROGRAM, ERASE, and WRITE commands are rejected by the device
Chip selection not allowed
VCC,min
VWI
RESET state
of the
device
tVSL
READ access allowed
tPUW
Device fully
accessible
Time
After power-up, the device is in the following state:
• Standby power mode (not the deep power-down mode)
• Write enable latch (WEL) bit is reset
• Write in progress (WIP) bit is reset
• Write lock bit = 0
• Lock down bit = 0
Normal precautions must be taken for supply line decoupling to stabilize the VCC sup-
ply. Each device in a system should have the VCC line decoupled by a suitable capacitor
close to the package pins; generally, this capacitor is of the order of 100 nF.
At power-down, when VCC drops from the operating voltage to below the POR threshold
voltage VWI, all operations are disabled and the device does not respond to any instruc-
tion.
Note: If power-down occurs while a WRITE, PROGRAM, or ERASE cycle is in progress,
some data corruption may result.
PDF: 09005aef8456654f
m25p40.pdf - Rev. G 05/13 EN
34
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.