MT41J256M8HX-187ED Datasheet, PDF (26/211 Pages) Micron Technology – 2Gb: x4, x8, x16 DDR3 SDRAM Features

2Gb: x4, x8, x16 DDR3 SDRAM
Electrical Specifications
Electrical Specifications
Absolute Ratings
Stresses greater than those listed in Table 5 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions outside those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods
may adversely affect reliability.
Table 5: Absolute Maximum Ratings
Symbol
V_DD
V_DDQ
V_IN, V_OUT
T_C
T_STG
Parameter
V_DD supply voltage relative to V_SS
V_DD supply voltage relative to V_SSQ
Voltage on any pin relative to V_SS
Operating case temperature - Commercial
Operating case temperature - Industrial
Operating case temperature - Automotive
Storage temperature
Min
–0.4
–0.4
–0.4
0
–40
–40
–55
Max
1.975
1.975
1.975
95
95
105
150
Unit
V
V
V
°C
°C
°C
°C
Notes
1
2, 3
2, 3
2, 3
Notes:
1. V_DD and V_DDQ must be within 300mV of each other at all times, and V_REF must not be
greater than 0.6 × V_DDQ. When V_DD and V_DDQ are <500mV, V_REF can be ≤300mV.
2. MAX operating case temperature. T_C is measured in the center of the package.
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum T_C dur-
ing operation.
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf - Rev. Q 04/13 EN
26
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