MT47H128M16RT-25EIT Datasheet, PDF (23/134 Pages) Micron Technology – 2Gb: x4, x8, x16 DDR2 SDRAM Features

2Gb: x4, x8, x16 DDR2 SDRAM
Electrical Specifications – Absolute Ratings
Electrical Specifications – Absolute Ratings
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions outside those indicated in the operational sections of this specification is not im-
plied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Table 5: Absolute Maximum DC Ratings
Parameter
Symbol
Min
Max
Units
Notes
V_DD supply voltage relative to V_SS
V_DD
–1.0
2.3
V
1
V_DDQ supply voltage relative to V_SSQ
V_DDQ
–0.5
2.3
V
1, 2
V_DDL supply voltage relative to V_SSL
V_DDL
–0.5
2.3
V
1
Voltage on any ball relative to V_SS
V_IN, V_OUT
–0.5
2.3
V
3
Input leakage current; any input 0V ื V_IN ื
I_I
–5
5
μA
V_DD; all other balls not under test = 0V)
Output leakage current; 0V ื V_OUT ื V_DDQ; DQ
I_OZ
–5
and ODT disabled
5
μA
V_REF leakage current; V_REF = valid V_REF level
I_VREF
–2
2
μA
Notes:
1. V_DD, V_DDQ, and V_DDL must be within 300mV of each other at all times; this is not re-
quired when power is ramping down.
2. V_REF ื 0.6 x V_DDQ; however, V_REF may be ุ V_DDQ provided that V_REF ื 300mV.
3. Voltage on any I/O may not exceed voltage on V_DDQ.
Temperature and Thermal Impedance
It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in
Table 6 (page 24), be maintained in order to ensure the junction temperature is in the
proper operating range to meet data sheet specifications. An important step in main-
taining the proper junction temperature is using the device’s thermal impedances cor-
rectly. The thermal impedances are listed in Table 7 (page 25) for the applicable and
available die revision and packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron
technical note TN-00-08, “Thermal Applications,” prior to using the thermal impedan-
ces listed in Table 7. For designs that are expected to last several years and require the
flexibility to use several designs, consider using final target theta values, rather than ex-
isting values, to account for larger thermal impedances.
The DDR2 SDRAM device’s safe junction temperature range can be maintained when
the T_C specification is not exceeded. In applications where the device’s ambient tem-
perature is too high, use of forced air and/or heat sinks may be required in order to sat-
isfy the case temperature specifications.
PDF: 09005aef824f87b6
2Gb_DDR2.pdf – Rev. H 10/11 EN
23
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