MT28F008B3 Datasheet, PDF (23/30 Pages) Micron Technology – FLASH MEMORY

8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
RECOMMENDED DC WRITE/ERASE CONDITIONS¹
Commercial Temperature (0ºC ≤ T_A ≤ +70ºC) and Extended Temperature (-40ºC ≤ T_A ≤ +85ºC); VCC = +3.3V ±0.3V
PARAMETER/CONDITION
VPP WRITE/ERASE lockout voltage
VPP voltage during WRITE/ERASE operation
VPP voltage during WRITE/ERASE operation
Boot block unlock voltage
VCC WRITE/ERASE lockout voltage
SYMBOL
VPPLK
VPPH1
VPPH2
VHH
VLKO
MIN
–
3.0
4.5
10
2
MAX UNITS NOTES
1.5
V
2
3.6
V
3
5.5
V
12.6 V
–
V
WRITE/ERASE CURRENT DRAIN⁴
Commercial Temperature (0ºC ≤ T_A ≤ +70ºC) and Extended Temperature (-40ºC - T_A - +85ºC); VCC = +3.3V ±0.3V
PARAMETER/CONDITION
WORD WRITE CURRENT: VCC SUPPLY
WORD WRITE CURRENT: VPP SUPPLY
BYTE WRITE CURRENT: VCC SUPPLY
BYTE WRITE CURRENT: VPP SUPPLY
ERASE CURRENT: VCC SUPPLY
ERASE CURRENT: VPP SUPPLY
ERASE SUSPEND CURRENT: VCC SUPPLY
(ERASE suspended)
ERASE SUSPEND CURRENT: VPP SUPPLY
(ERASE suspended)
3.3V VPP 5V VPP
SYMBOL MAX MAX
ICC7
20
20
IPP3
20
20
ICC8
20
20
IPP4
20
20
ICC9
25
25
IPP5
25
30
ICC10
8
10
UNITS NOTES
mA
5
mA
5
mA
6
mA
6
mA
mA
mA
7
IPP6
200
200
µA
NOTE: 1. WRITE operations are tested at VPP voltages equal to or less than the previous ERASE.
2. Absolute WRITE/ERASE protection when VPP ≤ VPPLK.
3. When 3.3V VCC and VPP are used, VCC cannot exceed VPP by more than 500mV during WRITE and ERASE operations.
4. All currents are in RMS unless otherwise noted.
5. Applies to MT28F800B3 only.
6. Applies to MT28F008B3 and MT28F800B3 with BYTE# = LOW.
7. Parameter is specified when device is not accessed. Actual current draw will be ICC10 plus read current if a READ is
executed while the device is in erase suspend mode.
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
23
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.