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MT28F008B3 Datasheet, PDF (20/30 Pages) Micron Technology – FLASH MEMORY
8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
READ TIMING PARAMETERS
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS1
Commercial Temperature (0ºC ≤ TA ≤ +70ºC) and Extended Temperature (-40ºC ≤ TA ≤ +85ºC); VCC = +3.3V ±0.3V
AC CHARACTERISTICS
PARAMETER
READ cycle time
Access time from CE#
Access time from OE#
Access time from address
RP# HIGH to output valid delay
OE# or CE# HIGH to output in High-Z
Output hold time from OE#, CE# or address change
RP# LOW pulse width
SYMBOL
tRC
tACE
tAOE
tAA
tRWH
tOD
tOH
tRP
-9/-9 ET
MIN MAX
90
90
40
90
1,000
25
0
150
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
2
2
NOTE: 1. Measurements tested under AC Test Conditions.
2. OE# may be delayed by tACE minus tAOE after CE# falls before tACE is affected.
AC TEST CONDITIONS
Input pulse levels ...................................................... 0V to 3V
Input rise and fall times ................................................ <10ns
Input timing reference level ........................................... 1.5V
Output timing reference level ........................................ 1.5V
Output load ................................... 1 TTL gate and CL = 50pF
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
20
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.