MT28F008B3 Datasheet, PDF (1/30 Pages) Micron Technology – FLASH MEMORY

FLASH MEMORY
8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
MT28F008B3
MT28F800B3
3V Only, Dual Supply (Smart 3)
FEATURES
• Eleven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Eight main memory blocks
• Smart 3 technology (B3):
3.3V ±0.3V VCC
3.3V ±0.3V VPP application programming
5V ±10% VPP application/production programming¹
• Compatible with 0.3µm Smart 3 device
• Advanced 0.18µm CMOS floating-gate process
• Address access time: 90ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• TSOP, SOP and FBGA packaging options
• Byte- or word-wide READ and WRITE
(MT28F800B3):
1 Meg x 8/512K x 16
OPTIONS
• Timing
90ns access
MARKING
-9
• Configurations
1 Meg x 8
512K x 16/1 Meg x 8
MT28F008B3
MT28F800B3
• Boot Block Starting Word Address
Top (7FFFFh)
T
Bottom (00000h)
B
• Operating Temperature Range
Commercial (0ºC to +70ºC)
Extended (-40ºC to +85ºC)
None
ET
• Packages
40-pin TSOP Type I (MT28F008B3)
VG
48-pin TSOP Type I (MT28F800B3)
WG
44-pin SOP (MT28F800B3)
SG
NOTE:
1. This generation of devices does not support 12V VPP
production programming; however, 5V VPP application
production programming can be used with no loss of
performance.
Part Number Example:
MT28F800B3WG-9 BET
40-Pin TSOP Type I 48-Pin TSOP Type I
44-Pin SOP
GENERAL DESCRIPTION
The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are
low-voltage, nonvolatile, electrically block-erasable (flash),
programmable memory devices containing 8,388,608 bits
organized as 524,288 words (16 bits) or 1,048,576 bytes (8
bits). Writing and erasing the device is done with a VPP
voltage of either 3.3V or 5V, while all operations are
performed with a 3.3V VCC. Due to process technology
advances, 5V VPP is optimal for application and production
programming. These devices are fabricated with Micron’s
advanced 0.18µm CMOS floating-gate process.
The MT28F008B3 and MT28F800B3 are organized
into eleven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure or
overwrite, the devices feature a hardware-protected
boot block. This block may be used to store code imple-
mented in low-level system recovery. The remaining
blocks vary in density and are written and erased with
no additional security measures.
Refer to Micron’s Web site (www.micron.com/flash)
for the latest data sheet.
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
1
©2001, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.