N2M400FDB311A3CE Datasheet, PDF (17/19 Pages) Micron Technology – e·MMC™ Memory

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Preliminary
4GB, 8GB, 16GB, 32GB: e·MMC
DC Electrical Specifications – Device Power
DC Electrical Specifications – Device Power
The device current consumption for various device configurations is defined in the
power class fields of the ECSD register.
V_CC is used for the NAND Flash device and its interface voltage; V_CCQ is used for the
controller and the e·MMC interface voltage. A C_REG capacitor must be connected to the
V_DDI terminal to stabilize regulator output on the system.
Figure 6: Device Power Diagram
V_CC
V_CCQ
V_DDI
C_REG
CLK
CMD
DAT[7:0]
Core regulator
Core
logic block
MMC controller
NAND
control signals
NAND Flash
NAND
data bus
Note: Stresses greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only, and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not guaranteed. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Table 7: Absolute Maximum Ratings
Parameters
Voltage input
V_CC supply
V_CCQ supply
Storage temperature
Note:
Symbol
Min
V_IN
V_CC
V_CCQ
T_STG
–0.6
–0.6
–0.6
–40
1. Voltage on any pin relative to V_SS.
Max
4.6
4.6
4.6
85
Unit
V
V
V
°C
PDF: 09005aef84a4d6f1
emmc_4gb_8gb_16gb_32gb_100b-it.pdf - Rev. C 7/12 EN
17
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