N2M400FDB311A3CE Datasheet, PDF (13/19 Pages) Micron Technology – e·MMC™ Memory

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Preliminary
4GB, 8GB, 16GB, 32GB: e·MMC
ECSD Register
Table 6: ECSD Register Field Parameters (Continued)
Name
SECURE ERASE multiplier
SECURE TRIM multiplier
Boot information
Reserved
Boot partition size
Access size
High-capacity erase unit size
High-capacity erase timeout
Reliable write-sector count
High-capacity write protect
group size
Sleep current (V_CC)
Sleep current (V_CCQ)
Reserved
Sleep/awake timeout
Reserved
Sector count
Reserved
Minimum write performance
for 8-bit at 52 MHz
Field
SEC_ERASE_MUL N2M400FDB311A3C[E/F],
T
N2M400GDB321A3C[E/F]
N2M400HDB321A3C[E/F],
N2M400JDB341A3C[E/F]
SEC_TRIM_MULT N2M400FDB311A3C[E/F],
N2M400GDB321A3C[E/F]
N2M400HDB321A3C[E/F],
N2M400JDB341A3C[E/F]
BOOT_INFO
–
BOOT_SIZE_MUL
T
ACC_SIZE
N2M400FDB311A3C[E/F],
N2M400GDB321A3C[E/F]
N2M400HDB321A3C[E/F],
N2M400JDB341A3C[E/F]
HC_ERASE_GRP_S N2M400FDB311A3C[E/F],
IZE
N2M400GDB321A3C[E/F]
N2M400HDB321A3C[E/F],
N2M400JDB341A3C[E/F]
ERASE_TIMEOUT_MULT
REL_WR_SEC_C
HC_WP_GRP_SIZE N2M400FDB311A3C[E/F]
N2M400GDB321A3C[E/F],
N2M400HDB321A3C[E/F]
N2M400JDB341A3C[E/F]
S_C_VCC
S_C_VCCQ
–
S_A_TIMEOUT
–
SEC_COUNT
N2M400FDB311A3C[E/F]
N2M400HDB321A3C[E/F]
N2M400GDB321A3C[E/F]
N2M400JDB341A3C[E/F]
–
MIN_PERF_W_8_52
Size
(Bytes
)
1
Cell
Type¹
R
ECSD
Bytes
230
ECSD
Value
02h
06h
1
R
229
03h
09h
1
R
228
7h
1
–
227
–
1
R
226
80h
1
R
225
06h
07h
1
R
224
08h
10h
1
R
223
01h
1
R
222
01h
1
R
221
01h
02h
04h
1
R
220
08h
1
R
219
08h
1
–
218
–
1
R
217
10h
1
–
216
–
4
R [215:212] 0070C000h
00E88000h
01D30000h
03B20000h
1
–
211
–
1
R
210
08h
PDF: 09005aef84a4d6f1
emmc_4gb_8gb_16gb_32gb_100b-it.pdf - Rev. C 7/12 EN
13
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