MT29F8G08DAAWCA Datasheet, PDF (1/81 Pages) Micron Technology – 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory

4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
Features
NAND Flash Memory
MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA
Features
• Single-level cell (SLC) technology
• Organization
– Page size x8: 2,112 bytes (2,048 + 64 bytes)
– Block size: 64 pages (128K + 4K bytes)
– Plane size: 2,048 blocks
– Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks;
16Gb: 16,384 blocks
• READ performance
– Random READ: 25µs (MAX)
– Sequential READ: 25ns (MIN)
• WRITE performance
– PROGRAM PAGE: 220µs (TYP)
– BLOCK ERASE: 1.5ms (TYP)
• Data retention: 10 years
• Endurance: 100,000 PROGRAM/ERASE cycles
• First block (block address 00h) guaranteed to be
valid up to 1,000 PROGRAM/ERASE cycles¹
• Industry-standard basic NAND Flash command set
• Advanced command set:
– PROGRAM PAGE CACHE MODE
– PAGE READ CACHE MODE
– One-time programmable (OTP) commands
– Two-plane commands
– Interleaved die operations
– READ UNIQUE ID (contact factory)
– READ ID2 (contact factory)
• Operation status byte provides a software method of
detecting:
– Operation completion
– Pass/fail condition
– Write-protect status
• Ready/busy# (R/B#) signal provides a hardware
method of detecting operation completion
• WP# signal: write protect entire device
• RESET required after power-up
• INTERNAL DATA MOVE operations supported
within the plane from which data is read
Figure 1: 48-Pin TSOP Type 1
Options
• Density²
– 4Gb (single die)
– 8Gb (dual-die stack 1 CE#)
– 8Gb (dual-die stack 2 CE#)
– 16Gb (quad-die stack)
• Device width: x8
• Configuration
# of die # of CE# # of R/B# I/O
1
1
1
Common
2
1
1
Common
2
2
2
Common
4
2
2
Common
• VCC: 2.7–3.6V
• Package
– 48 TSOP type I (lead-free plating)
– 48 TSOP type I OCPL³ (lead-free plating)
• Operating temperature
– Commercial (0°C to +70°C)
– Extended (–40°C to +85°C)⁴
Notes: 1. For further details, see “Error Management”
on page 58.
2. For part numbering and markings, see
Figure 2 on page 2.
3. OCPL = off-center parting line.
4. For ET devices, contact factory.
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__1.fm - Rev. B 2/07 EN
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©2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.